T
Takatoshi Yamada
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 222
Citations - 2270
Takatoshi Yamada is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Diamond & Field electron emission. The author has an hindex of 23, co-authored 212 publications receiving 2054 citations. Previous affiliations of Takatoshi Yamada include National Institute for Materials Science & Tokai University.
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Low-temperature graphene synthesis using microwave plasma CVD
TL;DR: In this article, a roll-to-roll surface wave plasma chemical vapour deposition (SWP-CVD) system was developed for continuous graphene film deposition towards industrial mass production.
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A roll-to-roll microwave plasma chemical vapor deposition process for the production of 294 mm width graphene films at low temperature
TL;DR: A roll-to-roll microwave plasma chemical vapor deposition (CVD) has been used for the continuous deposition of graphene films for industrial mass production as discussed by the authors, where a few layer graphene, consisting of flakes with a nanometer size was found from cross-sectional transmission electron microscopy.
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Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces
Daisuke Takeuchi,Hiromitsu Kato,G. S. Ri,Takatoshi Yamada,Purayath Robert Vinod,D. Hwang,Christoph E. Nebel,Hideyo Okushi,Satoshi Yamasaki +8 more
TL;DR: In this article, total photoyield experiments are applied to characterize p-, intrinsic, and n-type diamond with hydrogen-terminated surfaces, and a photoelectron threshold energy of 4.4 eV is detected which is attributed to the energy gap between the valence-band maximum and the vacuum level.
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Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation
TL;DR: In this paper, the first report on a practical diamond cold cathode, having pyramidal-shape array structure, promising for battery-driven flat panel displays was presented, and the turn-on field as low as 0.2-0.3 V/μm and remarkably high stability in the emission properties have been confirmed.
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Electron emission from conduction band of diamond with negative electron affinity
Hisato Yamaguchi,Hisato Yamaguchi,Tomoaki Masuzawa,S. Nozue,Yuki Kudo,Ichitaro Saito,J. Koe,M. Kudo,Takatoshi Yamada,Yuji Takakuwa,Ken Okano,Ken Okano +11 more
TL;DR: Okano et al. as mentioned in this paper showed that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical-vapor deposited (CVD) diamond was at conduction-band minimum utilizing negative-electron affinity (NEA).