M
Matthias Maiberg
Researcher at Martin Luther University of Halle-Wittenberg
Publications - 21
Citations - 529
Matthias Maiberg is an academic researcher from Martin Luther University of Halle-Wittenberg. The author has contributed to research in topics: Carrier lifetime & Solar cell. The author has an hindex of 11, co-authored 20 publications receiving 438 citations.
Papers
More filters
Journal ArticleDOI
Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells
Wolfram Witte,Daniel Abou-Ras,Karsten Albe,Gottfried H. Bauer,Frank Bertram,Christian Boit,Rudolf Brüggemann,Jürgen Christen,Jens Dietrich,A. Eicke,Dimitrios Hariskos,Matthias Maiberg,Roland Mainz,Max Meessen,Mathias Müller,O. Neumann,Thomas Orgis,Stefan Paetel,Johan Pohl,H. Rodriguez-Alvarez,Roland Scheer,Hans-Werner Schock,Thomas Unold,A. Weber,Michael Powalla +24 more
TL;DR: In this article, the formation, nature, and consequences of gallium gradients in CIGS solar cells were analyzed in real time during a rapid selenization process by in situ X-ray measurements.
Journal ArticleDOI
Theoretical study of time-resolved luminescence in semiconductors. III. Trap states in the band gap
TL;DR: In this article, the influence of trap states in the band gap of semiconductors on the time-resolved luminescence decay (TRL) after a pulsed excitation was studied.
Journal ArticleDOI
Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells.
Maximilian Krause,Aleksandra Nikolaeva,Matthias Maiberg,Philip L. Jackson,Dimitrios Hariskos,Wolfram Witte,José A. Márquez,Sergej Levcenko,Thomas Unold,Roland Scheer,Daniel Abou-Ras +10 more
TL;DR: Krause et al. show that inhomogeneously distributed net doping or lifetime have little impact while recombination at grain boundaries is one of the main loss mechanisms for high performance Cu(In,Ga)Se2 solar cells.
Journal ArticleDOI
Theoretical study of time-resolved luminescence in semiconductors. II. Pulsed excitation
Matthias Maiberg,Roland Scheer +1 more
TL;DR: In this article, the authors investigated the influence of the excitation pulse length, axial diffusion, bulk defect, and defects at the contacts, as well as space charge on the TRL-decay separately by quasi one-dimensional simulations of semiconductor layers and semiconductor homostructures.
Journal ArticleDOI
Theoretical study of time-resolved luminescence in semiconductors. I. Decay from the steady state
Matthias Maiberg,Roland Scheer +1 more
TL;DR: In this paper, the decay time of the time-resolved luminescence (TRL) was investigated on semiconductor layers and thin film homostructures by simulation with Synopsys TCAD® and by analytical approximate solution of the appropriate equations.