M
Mehrdad M. Moslehi
Researcher at University of Rochester
Publications - 56
Citations - 1594
Mehrdad M. Moslehi is an academic researcher from University of Rochester. The author has contributed to research in topics: Wafer & Silicon. The author has an hindex of 20, co-authored 56 publications receiving 1593 citations. Previous affiliations of Mehrdad M. Moslehi include Veeco & Stanford University.
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Patent
Thermal/microwave remote plasma multiprocessing reactor and method of use
TL;DR: In this paper, a single wafer rapid thermal/microwave remote plasma multiprocessing (RMP) multi-modal nuclear power station is presented. Butt et al. proposed a novel cold wall single-wafer Rapid Thermal/Microwave Remote Plasminar (RTHMP) multiprotor with a vacuum chamber and ports for plasma injection and non-plasma injection.
PatentDOI
Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
TL;DR: In this article, a microwave discharge technique was used to perform direct nitridation of silicon at a relatively low growth temperature of no more than about 500°C in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species.
Journal ArticleDOI
Thermal nitridation of Si and SiO 2 for VLSI
TL;DR: In this paper, the authors present an extensive review of thermal nitridation of Si and SiO 2, and show that very thin thermal silicon nitride and nitroxide films can be used as gate dielectrics for future highly scaled-down VLSI devices.
Journal ArticleDOI
Rapid Thermal Nitridation of SiO2 for Nitroxide Thin Dielectrics
TL;DR: In this article, the formation of the surface and interface nitrogen-rich layers has been investigated and correlated to the electrical behavior of these thin films, and it was concluded that rapid thermal nitridation of ≊100 A SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low field conductivity, reduces the high field conductivities, improves the dielectric breakdown field, modifies the trapping behavior of the insulator, and slows down the generation rate of new surface states due to high field electrical stress.
Patent
Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
TL;DR: In this paper, a gas injection plate with multiple injection zones is used to deliver the multiple process gases into the chamber for deposition onto the work piece (for example, a silicon wafer).