Atomic layer deposition: an overview.

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

Production, properties and potential of graphene

Glucose-derived water-soluble crystalline graphene quantum dots (GQDs) with an average diameter as small as 1.65 nm (∼5 layers) were prepared by a facile microwave-assisted hydrothermal method. The GQDs exhibits deep ultraviolet (DUV) emission of 4.1 eV, which is the shortest emission wavelength among all the solution-based QDs. The GQDs exhibit typical excitation wavelength-dependent properties as expected in carbon-based quantum dots. However, the emission wavelength is independent of the size of the GQDs. The unique optical properties of the GQDs are attributed to the self-passivated layer on the surface of the GQDs as revealed by electron energy loss spectroscopy. The photoluminescence quantum yields of the GQDs were determined to be 7–11%. The GQDs are capable of converting blue light into white light when the GQDs are coated onto a blue light emitting diode.

Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots

Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 108cm∕s and a room-temperature mobility of >15000cm2∕Vs. How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al2O3 and HfO2 films on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD). To our surprise, large numbers of Al2O3 and HfO2 nanoribbons, with dimensions of 5–200nm in width and >50μm in length, are observed on HOPG surfaces at growth temperature between 200 and 250°C. This is due to the large numbers of step edges of graphene on HOPG surfaces, which serve as nucleation sites for the ALD process. These Al2O3 and HfO2 nanoribbons can be used as hard masks to generate graphene nanoribbons or as top-gate dielectrics for graphene devices. This methodology could be extended to synthesize insulating, semiconducting, and metallic nanostructures and their combinations.

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Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions’ unique transport properties in graphene layers. The measured electron and hole mobilities on these fabricated graphene FETs are as high as 5400 and 4400cm2∕Vs, respectively, which are much larger than the corresponding values from conventional SiC or silicon.

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Epitaxial carbon was grown by heating $(000\overline{1})$ silicon carbide (SiC) to high temperatures $(1450--1600\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C})$ in vacuum. A continuous graphene surface layer was formed at temperatures above $1475\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}$. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moir\'e superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.

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Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov–de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).

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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation is an important fabrication technology that must be completely understood if SiC devices are to achieve their potential. One major problem with ion implantation into SiC is the surface roughening that results from annealing SiC at the high temperatures which are needed to activate implanted acceptor ions, boron or aluminum. This paper examines the causes and possible solutions to surface roughening of implanted and annealed 4H-SiC. Samples consisting of n-type epilayers (5 × 1015 cm−3, 4 µm thick) on 4H-SiC substrates were implanted with B or Al to a total dose of 4 × 1014 cm−2 or 2 × 1015 cm−2, respectively. Roughness measurements were made using atomic force microscopy. From the variation of root mean square (rms) roughness with annealing temperature, apparent activation energies for roughening following implantation with Al and B were 1.1 and 2.2 eV, respectively, when annealed in argon. Time-dependent activation and surface morphology analyses show a sublinear dependence of implant activation on time; activation percentages after a 5 min anneal following boron implantation are about a factor of two less than after a 40 min anneal. The rms surface roughness remained relatively constant with time for anneals in argon at 1750°C. Roughness values at this temperature were approximately 8.0 nm. Annealing experiments performed in different ambients demonstrated the benefits of using silane to maintain good surface morphology. Roughnesses were 1.0 nm (rms) when boron or aluminum implants were annealed in silane at 1700°C, but were about 8 and 11 nm for B and Al, respectively, when annealed in argon at the same temperature.

Michael A. Capano

Papers

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Surface roughening in ion implanted 4H-silicon carbide