M
Michael Bassler
Researcher at PARC
Publications - 83
Citations - 2551
Michael Bassler is an academic researcher from PARC. The author has contributed to research in topics: Optical cavity & Analyte. The author has an hindex of 28, co-authored 81 publications receiving 2482 citations. Previous affiliations of Michael Bassler include University of Erlangen-Nuremberg.
Papers
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Journal ArticleDOI
Intrinsic SiC/SiO2 Interface States
TL;DR: In this article, the energy distribution of electron states at SiC/SiO 2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy.
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Band offsets and electronic structure of SiC/SiO2 interfaces
TL;DR: In this paper, the electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide.
Journal ArticleDOI
Shallow electron traps at the 4H–SiC/SiO2 interface
TL;DR: In this article, the authors show that defects in the near-interfacial oxide layer trap a considerable density of electrons from the SiC, and are likely responsible for the severe degradation of the electron mobility observed in the surface channel of 4H-SiC/SiO2 devices.
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Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
Valeri Afanas'ev,Andre Stesmans,Michael Bassler,Gerhard Pensl,Max J. Schulz,Christopher Harris +5 more
TL;DR: The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces.
Patent
Tuning optical cavities
TL;DR: In this article, a tunable optical cavity can be tuned by relative movement between two reflection surfaces, such as by deforming elastomer spacers connected between mirrors or other light-reflective components that include the reflection surfaces.