V
Valeri Afanas'ev
Researcher at Katholieke Universiteit Leuven
Publications - 315
Citations - 8823
Valeri Afanas'ev is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Oxide & Band gap. The author has an hindex of 42, co-authored 299 publications receiving 8185 citations.
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Intrinsic SiC/SiO2 Interface States
TL;DR: In this article, the energy distribution of electron states at SiC/SiO 2 interfaces produced by oxidation of various (3C, 4H, 6H) SiC polytypes is studied by electrical analysis techniques and internal photoemission spectroscopy.
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Electronic properties of hydrogenated silicene and germanene
Michel Houssa,Emilio Scalise,Kiroubanand Sankaran,Geoffrey Pourtois,Valeri Afanas'ev,Andre Stesmans +5 more
TL;DR: In this paper, the electronic properties of hydrogenated silicene and germanene, so called silicane and Germanane, respectively, are investigated using first-principles calculations based on density functional theory.
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Trap-assisted tunneling in high permittivity gate dielectric stacks
Michel Houssa,Marko Tuominen,Mohamed Naili,Valeri Afanas'ev,Andre Stesmans,Suvi Haukka,M.M. Heyns +6 more
TL;DR: In this article, the electrical characteristics of SiOx/ZrO2 and Si Ox/Ta2O5 gate dielectric stacks were investigated and the current density was shown to be strongly temperature dependent at low voltage (below about 2 V).
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Band offsets and electronic structure of SiC/SiO2 interfaces
TL;DR: In this paper, the electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide.
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Can silicon behave like graphene? A first-principles study
TL;DR: In this article, the electronic properties of two-dimensional hexagonal silicon (silicene) were investigated using first-principles simulations, and it was predicted that silicene inserted into a graphitelike lattice, like ultrathin AlN stacks, preserves its sp2-hydridization, and hence its graphenelike electronic properties.