Michael Fiederle

TL;DR: In this paper, the authors investigated a new approach using pixel detectors Timepix for double beta decay (βββ) experiments, which can identify the particle interaction (from the 2D signature it generates).

TL;DR: In order to study composition and quality of the deposited films, optical and scanning electron microscopy as well as X-ray diffraction measurements have been carried out and resistivity and dark current were determined.

TL;DR: In this article, the dewetting phenomenon associated with the Vertical Bridgman (VB) crystal growth technique leads to the growth of a crystal without contact with the crucible, which has been observed in several microgravity experiments for different semiconductor crystals.

TL;DR: The Timepix3 detector as mentioned in this paper is a photon counting semiconductor detector that enables to simultaneously measure the energy and time of arrival of each incident X- ray photon, which can be exploited for several imaging applications, such as X-ray phase contrast imaging (XPCI).

TL;DR: In this paper, a non-destructive, contactless characterization method called time dependent charge measurements (TDCM) is used for the investigation of high resistivity CdTe doped with vanadium or titanium TDCM is presented as a multi-purpose technique which allows for the examination of the resistivity, the thermal activation energy of the charge carriers, the photosensitivity and the surface voltage.