M
Michael S. Arnold
Researcher at University of Wisconsin-Madison
Publications - 203
Citations - 13195
Michael S. Arnold is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Carbon nanotube & Graphene. The author has an hindex of 46, co-authored 180 publications receiving 12014 citations. Previous affiliations of Michael S. Arnold include Office of Technology Transfer & Northwestern University.
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Controlling the density of pinhole defects in monolayer graphene synthesized via chemical vapor deposition on copper
TL;DR: In this paper, a relationship between surface roughness and the pinhole defect density is observed on Cu foils and epitaxial Cu thin films using CH4 as the precursor.
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Structural Modifications to Polystyrene via Self‐Assembling Molecules
John C. Stendahl,Eugene R. Zubarev,Eugene R. Zubarev,Michael S. Arnold,Mark C. Hersam,Hung-Jue Sue,Samuel I. Stupp +6 more
TL;DR: In this paper, the structural role of self-assembling DRC nanoribbons in polystyrene was investigated by investigating the mechanical properties and deformation microstructures of polymers modified by self-assembly.
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Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns
Tzu-Hsuan Chang,Shisheng Xiong,Robert M. Jacobberger,Solomon Mikael,Hyo Seon Suh,Chi-Chun Liu,Chi-Chun Liu,Dalong Geng,Xudong Wang,Michael S. Arnold,Zhenqiang Ma,Paul F. Nealey +11 more
TL;DR: Using an atomically-thin layer of graphene on germanium, after two simple processing steps, this work creates a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate), demonstrating the advantages of inorganic chemical patterns composed of hard surfaces.
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On NO2 excited state lifetimes and g factors in the 593 nm band
TL;DR: In this article, a correlation between the values of lifetime and g-factor measurements, which was not seen before, was found, and the results reveal that there is a correlation with the value of life span and g factor.
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Passivation of Germanium by Graphene
Richard Rojas Delgado,Robert M. Jacobberger,Susmit Singha Roy,Vijay Saradhi Mangu,Michael S. Arnold,Francesca Cavallo,Max G. Lagally +6 more
TL;DR: It is concluded that access to the graphene/Ge interface must occur via defects in the graphene and the excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.