M
Ming Li
Researcher at Shanghai Jiao Tong University
Publications - 383
Citations - 4768
Ming Li is an academic researcher from Shanghai Jiao Tong University. The author has contributed to research in topics: Copper & Intermetallic. The author has an hindex of 32, co-authored 364 publications receiving 3739 citations. Previous affiliations of Ming Li include Chinese Academy of Sciences.
Papers
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Proceedings ArticleDOI
Modeling the bottom-up filling of through silicon vias with different additives
TL;DR: In this paper, a numerical model was built to simulate the electroplating process in different conditions using the Lagrange-Eulerian (ALE) method for solving moving boundaries in Finite Element Method (FEM).
Journal ArticleDOI
The performance and degradation process of a greenly synthesized transient heterojunction diode
TL;DR: In this paper, the degradation behavior of the semiconducting films was addressed by electrochemical impedance spectroscopy, which simultaneously revealed the evolution of resistance, capacitance and surface states, and demonstrated a transient diode based on zinc oxide and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate.
Proceedings ArticleDOI
Influence of Average Current Density and Pulse Frequency on Morphology and Structure of Pulse-reverse Current Electroplated Ni Plating
TL;DR: In this paper, the influence of two PRC parameters, average current density and pulse frequency, on surface morphology and grain size of the Ni deposits was investigated, and the results are instructive in the electroplating obtainment of Ni for packaging applications.
Proceedings ArticleDOI
Microstructural evolution of Sn-9Zn-3Bi and Sn-9Zn-3Bi-0.3Cr solder under high-temperature and high-humidity conditions
TL;DR: In this paper, the microstructual stability of Sn-8Zn-3Bi/Cu joints has been investigated under 85 °C temperature and 85% humidity conditions as a function of exposure time.
Proceedings ArticleDOI
An effective way to solve the void problem of traditional underfill based on NCP technology
TL;DR: In this paper, the problem of high-density flip-chip underfilling is studied, where NCP thermocompression bonding is used to solve the void problem that occurs in the traditional under-filling process.