In general, Micropower Impulse Radar (MIR) depends on Ultra-Wideband (UWB) transmission systems. UWB technology can supply innovative new systems and products that have an obvious value for radar and communications uses. Important applications include bridge-deck inspection systems, ground penetrating radar, mine detection, and precise distance resolution for such things as liquid level measurement. Most of these UWB inspection and measurement methods have some unique qualities, which need to be pursued. Therefore, in considering changes to Part 15 the FCC needs to take into account the unique features of UWB technology. MIR is applicable to two general types of UWB systems: radar systems and communications systems. Currently LLNL and its licensees are focusing on radar or radar type systems. LLNL is evaluating MIR for specialized communication systems. MIR is a relatively low power technology. Therefore, MIR systems seem to have a low potential for causing harmful interference to other users of the spectrum since the transmitted signal is spread over a wide bandwidth, which results in a relatively low spectral power density.

/pdf/response-to-fcc-98-208-notice-of-inquiry-in-the-matter-of-3attixctl7.pdf

Response to FCC 98-208 notice of inquiry in the matter of revision of part 15 of the commission's rules regarding ultra-wideband transmission systems

Ultra Wideband Signals and Systems in Communication Engineering

http://ieeexplore.ieee.org/iel5/5/31324/01456901.pdf

Microelectronic circuits

IEEE Antennas and Wireless Propagation Letters

https://gut.bmj.com/content/gutjnl/58/12/1680.full.pdf

Recent advances in autoimmune pancreatitis

Power supply voltage (Vdd) scaling in each era is making difficult to manage speed and power trade-off. Latch is a basic component in wireless and wireline communication to enable data transmission at Gbps. Conventional latches minimise the trade-off at the cost of layout area and average power (Pavg). Coupled to a common power delivery network (PDN) and a CPU core drawing abrupt current, a 2-level latch is presented and evaluated to understand performance under process, voltage, temperature (PVT) and AC noise. An analytical delay model is also derived to understand Pavg- delay (td) trade-off. The delay model gives simple expression suitable for manual evaluation of td. The Pavg, td, power-delay-product (PDP) and figure of merit (FoM) in post-layout are 28.5 μW, 140.4 ps, 4 fJ and 172.3 ns×fJ×µm2, respectively, in 90-nm CMOS and 0.45 V Vdd. Nonetheless, at distinct corner the metrics change by 0.01 μW, 0.2 ps, 0.005 fJ and 0.4 ns×fJ×µm2, respectively, for 1°C shift in temperature. The variations for 1 mV drop in Vdd are 0.2 μW, 1 ps, 0.005 fJ and 1.4 ns×fJ×µm2, respectively. Despite this, the voltage close to the die VP oscillates with time as the CPU pumps current. The td due to AC fluctuating noise, namely, 1st droop, 2nd droop, so forth and DC (various voltage levels) are quite different. The Ldi/dt noise so generated due to the oscillations in VP introduces jitter in the output swing. 

A PVT Tolerant Latch in a 90-nm CMOS and Performances under AC Noise

This paper presents the design of printed monopole antenna for various ultra wide band wireless communication applications. Proposed antenna is designed on FR4 substrate of h=1.6mm, relative permittivity 4.4,loss tangent of 0.02, dimension 50 x 50 mm2. The gap between edge of ground plan (back side of antenna) and edge of patch is varied to get different simulated results. The proposed antenna exhibits a 10 dB impedance bandwidth from 3.1 to 10.6 GHz, which constitutes about 109.48%. It has been observed that proposed antennas are small in size and simple in design and fabrication but its performance is very good for UWB applications also radiates omnidirectionally over the UWB band defined by Federal Communication Commission.

Design of Compact Ultra Wide Band Antenna for Wireless Communication System

The paper describes a technique for improvement in gain and noise figure of an Ultra Wideband amplifier. The paper gives an overview of the Ultra Wideband technology and the amplifier as well. The input to the amplifier comes from the UWB signal generator which is then sent to the antenna after amplification. The design is proposed using a single stage amplifier circuit and attains a better response along the bandwidth with minimum distortion and low losses. The circuit consists of Hetro-junction Bipolar transistor or HBT that is biased using a voltage divider bias. Key parameters have been analysed on Serenade SV simulation tool. The amplifier gain in the whole bandwidth has been improved and the noise figure is also reduced in that bandwidth. The reflection from the either ports in minimised substantially. The proposed amplifier has a simple structure and works satisfactorily over the entire bandwidth.

Design of Ultra Wideband Amplifier Using Single Hetero-junction Bipolar Transistor for Wireless Applications

|This work presents a design and analysis of a high gain Antipodal Vivaldi Antenna (AVA) with quad band notch characteristics for Ultra-Wideband (UWB) applications. The proposed AVA is designed on a 1.2 mm FR4 substrate with dielectric constant 4.3 and loss tangent 0.025. Initially, the AVA parameters are optimized in a full wave simulator to get the required UWB performance. The UWB performance is further improved signi(cid:12)cantly by cutting a C-shaped slot from the AVA (cid:13)ares. The C-shaped slot introduces an extra resonance that widens the initial bandwidth. The band-notched (cid:12)ltering characteristics are achieved by | adding a Sun Shaped Slot (SSS) on the top and bottom (cid:13)ares of the AVA, inserting a hexagonal shaped Complimentary Split Ring Resonator (CSRR) on the ground plane of the AVA, and (cid:12)nally by inserting vias on either side of the feed line. The (cid:12)rst designed notch band is from 2.2{2.7 GHz, covering the Bluetooth region. The second notch band is designed from 3.3{3.6 GHz, corresponding to WiMAX applications, and the third notch band is from 4.6{5.7 GHz corresponding to the WLAN band. Finally, a notch is fashioned from 8.8{9.5 GHz, corresponding to ITU applications. The simulated and measured return loss plots show that the antenna achieves an impedance bandwidth of 1.15{14 GHz with a re(cid:13)ection coeﬃcient less than (cid:0) 10 dB, except at the four eliminating bands. To the best of the authors knowledge, the proposed technique is novel, and it allows good narrowband rejection over the UWB regime.

http://www.jpier.org/PIERC/pierc120/09.22022402.pdf

Mithilesh Kumar

Papers

A PVT Tolerant Latch in a 90-nm CMOS and Performances under AC Noise

Design of Compact Ultra Wide Band Antenna for Wireless Communication System

Design of Ultra Wideband Amplifier Using Single Hetero-junction Bipolar Transistor for Wireless Applications

A novel antipodal vivaldi antenna with quad band notch characteristics for uwb applications

Epigenomics in stress tolerance of plants under the climate change