This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by providing a chronological overview of important milestones and discoveries that have allowed heterostructures grown on Si substrates to transition from purely academic research in the 1980’s and 1990’s to the commercial development that is taking place today. We next provide a topical review of the various types of strain-engineered MOSFETs that can be integrated onto relaxed Si1−xGex, including surface-channel strained Si n- and p-MOSFETs, as well as double-heterostructure MOSFETs which combine a strained Si surface channel with a Ge-rich buried channel. In all cases, we will focus on the connections between layer structure, band structure, and MOS mobility characteristics. Although the surface and starting substrate are composed of pure Si, the use of strained Si still creates new challenges, and we shall also review the litera...

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

In order to enable optical systems to operate with a high degree of compactness and reliability it is necessary to combine large number of optical functions in small monolithic structures. A development, somewhat reminiscent of that that took place in Integrated Electronics, is now beginning to take place in optics. The initial challenge in this emerging field, known appropriately as "Integrated Optics", is to demonstrate the possibility of performing basic optical functions such as light generation, coupling, modulation, and guiding in Integrated Optical configurations. The talk will review the main theoretical and experimental developments to date in Integrated Optics. Specific topics to be discussed include: Material considerations, guiding mechanisms, modulation, coupling and mode losses. The fabrication and applications of periodic thin film structures will be discussed.

Integrated optics

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.

A 90-nm logic technology featuring strained-silicon

It has been known for more than 60 years, and suspected for over 100, that alveolar hypoxia causes pulmonary vasoconstriction by means of mechanisms local to the lung. For the last 20 years, it has been clear that the essential sensor, transduction, and effector mechanisms responsible for hypoxic pulmonary vasoconstriction (HPV) reside in the pulmonary arterial smooth muscle cell. The main focus of this review is the cellular and molecular work performed to clarify these intrinsic mechanisms and to determine how they are facilitated and inhibited by the extrinsic influences of other cells. Because the interaction of intrinsic and extrinsic mechanisms is likely to shape expression of HPV in vivo, we relate results obtained in cells to HPV in more intact preparations, such as intact and isolated lungs and isolated pulmonary vessels. Finally, we evaluate evidence regarding the contribution of HPV to the physiological and pathophysiological processes involved in the transition from fetal to neonatal life, pulmonary gas exchange, high-altitude pulmonary edema, and pulmonary hypertension. Although understanding of HPV has advanced significantly, major areas of ignorance and uncertainty await resolution.

Hypoxic pulmonary vasoconstriction.

This review is focused on describing the intimate link which exists between aerogels and thermal superinsulation. For long, this applied field has been considered as the most promising potential market for these nanomaterials. Today, there are several indicators suggesting that this old vision is likely to become reality in the near future. Based on recent developments in the field, we are confident that aerogels still offer the greatest potential for non-evacuated superinsulation systems and consequently must be considered as an amazing opportunity for sustainable development. The practical realization of such products however is time-consuming and a significant amount of R&D activities are still necessary to yield improved aerogel-based insulation products for mass markets.

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Aerogel-based thermal superinsulation: an overview

Silicon dioxide films have been deposited at low temperatures (200–250 °C) by microwave plasma enhanced decomposition of tetraethylorthosilicate (TEOS). The effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and the physical properties of the films have been investigated. Structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x‐ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses. Films deposited using TEOS and oxygen have confirmed a density comparable to standard silane‐based low‐pressure chemical vapor deposition and plasma enhanced chemical vapor deposition oxides, nearly perfect stoichiometry, extremely low sodium and carbon content, and the absence of many undesirable hydrogen related bonds. Various electrical properties, viz., resistivity, breakdown strength, fixed oxide charge density, interface state density, and trapping behavior have been evaluated by the...

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

* Chapter 1: Introduction * Chapter 2: Strained Layer Epitaxy * Chapter 3: Electronic Properties of Alloy Layers * Chapter 4: Gate Dielectrics on Strained Layers * Chapter 5: SiGe Heterojunction Bipolar Transistors * Chapter 6: Heterostructure Field Effect Transistors * Chapter 7: BICFET, RTD and Other Devices * Chapter 8: MODFETs * Chapter 9: Contact Metallization on Strained Layers * Chapter 10: Si/SiGe Optoelectronics

Strained silicon heterostructures : materials and devices

The growth of a high quality, step-graded lattice-relaxed SiGe buffer layer on a Si(100) substrate is investigated. p -MOSFETs were fabricated on strained-Si grown on top of the above layer. Carrier confinement at the type-II strained-Si/SiGe buffer interface is observed clearly from the device transconductance and C - V measurements. At high vertical field, compared to bulk silicon, the channel mobility of the strained-Si device with x =0.18 is found to be about 40% and 200% higher at 300 K and 77 K respectively. Measurements on transconductance enhancement are also reported. Data at 77 K provide evidence of two channels and a large enhancement of mobility at high transverse field.

Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field

A microwave plasma discharge at very low temperatures (200–250 °C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications. The addition of CHF3 as a source of fluorine enhances the growth rate. A x‐ray photoelectron spectroscopy study indicates the incorporation of fluorine (F/Si≂0.2) in the film. Electrical properties of the grown layers have been evaluated by the characterization of metal‐insulator‐semiconductor capacitors. Results have indicated the presence of negative charges in the insulator. The estimated charge density is lowest for the fluorinated film. The conduction mechanism in the films at room temperature appears to be Frenkel–Poole type.

Fluorine-enhanced nitridation of silicon at low temperatures in a microwave plasma

Silicon dioxide films deposited from tetraethylorthosilicate (TEOS) using plasma-enhanced chemical vapour deposition (PECVD) are reviewed. The effect of the presence of oxygen on the film deposition rate and mechanism and the physical properties of the films, particularly the step coverage properties (conformality), are discussed in detail. Structural characterisation of the films has been carried out via etch rate measurements, infrared transmission spectroscopy, X-ray photoelectron spectroscopy (XPS) and Auger and secondary ion mass spectroscopy (SIMS) analysis. Electrical properties, i.e. resistivity, breakdown strength, fixed oxide charge density, interface state density and trapping behaviour, have been evaluated using metal-oxide-semiconductor (MOS) structures fabricated using the deposited oxides. Films deposited by microwave plasma-enhanced decomposition of TEOS in the presence of oxygen have been found to be comparable with standard silane-based low-pressure chemical vapour deposition (LPCVD) and PECVD oxides. It has been shown that films deposited on thin native oxides grown by either in situ plasma oxidation or low-temperature thermal oxidation exhibit excellent electrical properties.

N.B. Chakrabarti

Papers

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Strained silicon heterostructures : materials and devices

Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field

Fluorine-enhanced nitridation of silicon at low temperatures in a microwave plasma

TEOS‐based PECVD of silicon dioxide for VLSI applications