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N.K. Zous
Researcher at National Chiao Tung University
Publications - 37
Citations - 618
N.K. Zous is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Flash memory & Charge trap flash. The author has an hindex of 12, co-authored 37 publications receiving 606 citations.
Papers
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Proceedings ArticleDOI
Data retention behavior of a SONOS type two-bit storage flash memory cell
Wen-Jer Tsai,N.K. Zous,Chia Jen Liu,C.C. Liu,C.H. Chen,Tahui Wang,S. Pan,Chih-Yuan Lu,S.H. Gu +8 more
TL;DR: In this paper, data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase were investigated, and a threshold voltage drift with storage time was observed after P/E cycling stress.
Proceedings ArticleDOI
Cause of data retention loss in a nitride-based localized trapping storage flash memory cell
Wen-Jer Tsai,S.H. Gu,N.K. Zous,Chih-Ting Yeh,C.C. Liu,C.H. Chen,Tahui Wang,S. Pan,Chih-Yuan Lu +8 more
TL;DR: In this paper, the data retention loss in a localized trapping storage flash memory cell with a SONOS type structure is investigated, and both charge loss through the bottom oxide and lateral migration of trapped charges in the nitride layer are considered for data retention.
Proceedings ArticleDOI
Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells
TL;DR: In this paper, the reliability issues of two-bit storage nitride flash memory cells, including low-V/sub t/state threshold voltage instability, read-disturb, and high V/sub T/state charge loss are addressed.
Journal ArticleDOI
Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
TL;DR: In this paper, a measurement technique was proposed to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient.
Proceedings ArticleDOI
Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type flash memory
C.C. Yeh,Wen-Jer Tsai,T.C. Lu,Hung-Yueh Chen,Han-Chao Lai,N.K. Zous,Y.Y. Liao,G.D. You,S.K. Cho,C.C. Liu,F.S. Hsu,L.T. Huang,W.S. Chiang,Chia Jen Liu,C.F. Cheng,M.H. Chou,C.H. Chen,Tahui Wang,Wenchi Ting,S. Pan,J. Ku,Chih-Yuan Lu +21 more
TL;DR: By adding vertical electrical field treatments during program/erase operations, the over erasure and data retentivities in high/low Vt states are significantly improved.