Na Ren

TL;DR: In this paper, an in-series and in-parallel combination power decoupling method for the single-phase inverter is presented, which can achieve a more than 89% reduction of the dc-link capacitance compared with the traditional inverter.

Abstract: This paper presents the design, fabrication, and experimental analysis of 1200 V 4H-SiC trenched junction barrier Schottky (TJBS) diodes. Design considerations and device performances of the TJBS devices are compared with those of the conventional planar JBS diodes via numerical simulation, analytical modeling, and experiments. It was found that, for conventional planar JBS diodes, due to its limited P+ implantation depth, there is a tight tradeoff between forward ON-resistance and blocking voltage. This does not only put stringent requirement on obtaining a narrow photolithography line width ( \(\sim 1.5\) \(\mu \) m), but also makes the device design window narrow. The TJBS diodes can substantially alleviate such tradeoff and obtain a larger design window that enables good reverse blocking and forward conduction capabilities at the same time. As a result, this structure demands less restriction on line width control (2.2–3.2 \(\mu \) m) of the fabrication process and hence can improve the device yield.

TL;DR: In this article, an analytical model of potential and electric field distributions with 2D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes is presented.

TL;DR: In this article, the avalanche ruggedness and failure mechanism of SiC MOSFET in single-pulse Unclamped Inductive Switching (UIS) test are investigated and compared with Si IGBT.

TL;DR: In this article, a silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process.