Journal ArticleDOI
An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes
Na Ren,Kuang Sheng +1 more
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TLDR
In this article, an analytical model of potential and electric field distributions with 2D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes is presented.Abstract:
This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS diodes in reverse biases are analyzed in detail. An analytical model of potential and electric field distributions with 2-D effects is proposed. Based on the modeling results of the surface electric field, a physical model accounting for three main mechanisms, namely, thermionic emission, tunneling, and avalanche multiplication is developed for the device reverse I-V characteristics. The models are verified by experimental results. Based on the physical model, optimization of the TJBS parameters including barrier height, junction depth, and junction spacing can be carried out with the target of achieving the lowest device ON-state voltage while limiting the reverse leakage current to a reasonable level. As a result, for a given breakdown voltage, an optimum set of parameters can be obtained.read more
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Journal ArticleDOI
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
A. F. Witulski,Robert R. Arslanbekov,Ashok Raman,Ronald D. Schrimpf,Andrew L. Sternberg,Kenneth F. Galloway,Arto Javanainen,David Grider,Daniel J. Lichtenwalner,Brett Hull +9 more
TL;DR: In this article, the authors show that the boundary between leakage current degradation and a single event-burnout-like effect is a strong function of linear energy transfer and reverse bias, consistent with the hypothesis that ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.
Proceedings ArticleDOI
Miller plateau as an indicator of SiC MOSFET gate oxide degradation
TL;DR: In this paper, a new indicator of SiC MOSFET gate oxide degradation based on Miller plateau was presented, and the relationship between Miller plateau and ambient temperature was explored by theoretical analysis.
Journal ArticleDOI
Optimal drift region for diamond power devices
TL;DR: In this article, a focus on the optimization of the specific ON state resistance as function of the breakdown voltage figure of merit has been carried out, while optimizing the drift layer and calculating the specific on state resistance of unipolar high voltage diamond power devices.
Journal ArticleDOI
Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
Luigi Di Benedetto,Gian Domenico Licciardo,Tobias Erlbacher,Anton J. Bauer,Salvatore Bellone +4 more
TL;DR: In this paper, an analytical instrument to design 4H-SiC planar and trenched junction barrier Schottky (JBS) diodes is proposed, which is based on a novel full analytical description of the electric field distribution into channel region of the device under reverse bias conditions.
Journal ArticleDOI
Review of Silicon Carbide Processing for Power MOSFET
Catherine Langpoklakpam,An Chen Liu,Kuo-Hsiung Chu,Lung Hsing Hsu,Wen-Chung Lee,Shih Chen Chen,Chia-Wei Sun,Min-Hsiung Shih,Kunghong Lee,Hao-Chung Kuo +9 more
TL;DR: A general review of the critical processing steps for manufacturing silicon carbide (SiC) MOSFETs and power applications based on SiC power devices are covered in this article . But, the reliability issues of SiC MOS FETs are also briefly summarized.
References
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BookDOI
Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Journal ArticleDOI
Fowler‐Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger,E. H. Snow +1 more
TL;DR: In this article, the relative effective mass in the forbidden energy gap was found to be about 0.4, which is lower by a factor of five to ten than the expected values, probably due to trapping effects.
Journal ArticleDOI
On tunneling in metal‐oxide‐silicon structures
TL;DR: In this article, the analysis of Fowler-Nordheim tunneling data in metaloxide-silicon structures is reviewed, and it is concluded that a parabolic dispersion relation for SiO2 and an electron effective mass of mox = 0.5m provide the best description of the experimental results.
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