Jean-Marie Lauenstein

TL;DR: In this paper, Monte-Carlo simulations for several technologies have been used to predict the SEE response to irradiation in the absence of detailed information about the device geometry and fabrication process.

TL;DR: In this paper, the authors investigated SEB in high-voltage silicon carbide power MOSFETs and showed a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm2/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage.

TL;DR: In this paper, a mechanism based on ion-induced, highly localized energy pulses is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and junction barrier Schottky (JBS) diodes.

TL;DR: In this paper, the ion-induced leakage current increase in 4H-SiC Schottky power diodes was investigated and it was shown that degradation is due to the synergy between applied bias and ion energy deposition.

TL;DR: In this article, the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET) was analyzed.