A base station device which performs communication with a mobile station by using a downlink shared channel includes: reception means for receiving transmission acknowledgement information for a downlink shared channel from the mobile station by a control channel which is frequency-multiplexed with an uplink shared channel; measurement means for measuring radio quality of the control channel; and judgment means for judging the reliability of the downlink radio quality information according to the radio quality. Moreover, a communication control method in the base station device which performs communication with the mobile station by using the downlink shared channel includes: a step of receiving transmission acknowledgement information for the downlink shared channel from the mobile station by the control channel which is frequency-multiplexed with the uplink shared channel; a step of measuring radio quality of the control channel; and a step of judging whether the mobile station has transmitted the downlink radio quality information according to the radio quality.

Base station device and communication control method

An organic light-emitting diode comprising a first (102) and second barrier coating (110),wherein the barrier coating is selected from (i) amorphous silicon carbide, (ii) an amorphous silicon carbide alloy comprising at least one element selected from F, N, B, and P, (iii) hydrogenated silicon oxycarbide, (iv) a coating prepared by (a) curing a hydrogen silsesquioxane resin with an electron beam or (b) reacting a hydrogen silsesquioxane resin using a chemical vapor deposition process; and (v) a mutilayer combination of at least two of (i), (ii), (iii), and (iv).

Organic light emitting diode

We study the backward Euler method with variable time steps for abstract evolution equations in Hilbert spaces. Exploiting convexity of the underlying potential or the angle-bounded condition, thereby assuming no further regularity, we derive novel a posteriori estimates of the discretization error in terms of computable quantities related to the amount of energy dissipation or monotonicity residual. These estimators depend solely on the discrete solution and data and impose no constraints between consecutive time steps. We also prove that they converge to zero with an optimal rate with respect to the regularity of the solution. We apply the abstract results to a number of concrete, strongly nonlinear problems of parabolic type with degenerate or singular character. © 2000 John Wiley & Sons, Inc.

A posteriori error estimates for variable time-step discretizations of nonlinear evolution equations †

This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the “ideal glass.” Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

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Perspective: Highly stable vapor-deposited glasses

Organic light-emitting devices (OLEDs) are expected to be adopted as the next generation of general lighting because they are more efficient than fluorescent tubes and are mercury-free. The theoretical limit of operating voltage is generally believed to be equal to the energy gap, which corresponds to the energy difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) for the emitter molecule divided by the electron charge (e). Here, green OLEDs operating below a theoretical limit of the energy gap (Eg) voltage with high external quantum efficiency over 20% are demonstrated using fac-tris(2-phenylpyridine)iridium(III) with a peak emission wavelength of 523 nm, which is equivalent to a photon energy of 2.38 eV. An optimized OLED operates clearly below the theoretical limit of the Eg voltage at 2.38 V showing 100 cd m−2 at 2.25 V and 5000 cd m−2 at 2.95 V without any light outcoupling enhancement techniques.

Extremely Low Operating Voltage Green Phosphorescent Organic Light-Emitting Devices

Charge accumulation at the organic heterointerfaces in multilayer organic light-emitting diodes (OLEDs) is an important process for understanding their device operation, efficiency, and degradation properties. Charge accumulation behavior has typically been analyzed in terms of the energy barrier and difference of the charge carrier mobility across heterointerfaces. In this study, we demonstrate that permanent dipole moments and their orientational order also play a significant role in the charge behavior at organic semiconductor interfaces. The charge accumulation properties of bilayer devices composed of polar or nonpolar molecules deposited on a 4,4’-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl layer between the anode and cathode were examined by displacement current measurement and impedance spectroscopy. In addition, Kelvin probe measurements for the corresponding bilayer structures excluding the cathode were performed to analyze the relationship between the potential profile and charge accumulation pr...

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Charge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices

We examined the effects of ambient light on the device properties of an organic light-emitting diode, indium tin oxide/4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (α-NPD)/tris-(8-hydroxyquinolate) aluminum (Alq3)∕Al, during fabrication using displacement current measurement. Light irradiation induces a shift in the threshold voltage for hole injection and results in the formation of charge traps in the Alq3 layer. The voltage shift implies a reduction in charge density at the α-NPD∕Alq3 interface. The origin of the interfacial charge can be attributed to dipole moment ordering in the Alq3 layer.

Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes

Subdifferential operator approach to a class of nonlinear systems for Stefan problems with phase relaxation

We report space charge formation in tris-(8-hydroxyquinolate) aluminum (Alq3)-based organic light-emitting diodes induced by light irradiation and ion-gauge (IG) operation during device fabrication. An analysis of the capacitance-voltage curves of the light-treated devices reveals the presence of uniformly distributed negative space charges in the Alq3 layer. Spatial inhomogeneity of the orientation polarization as well as electrons trapped in the Alq3 film can be the origin of the negative space charge. We also found that positively charged species can be included in the device due to IG operation.

Light- and ion-gauge-induced space charges in tris-(8-hydroxyquinolate) aluminum-based organic light-emitting diodes

PROBLEM TO BE SOLVED: To suppress cross section deformation of a roof side skeleton part. SOLUTION: In the roof side structure 10, an upper wall 18A and a lower wall 18B making a longitudinal direction of a vehicle body to a longitudinal direction respectively are connected to a side wall 18C at an outer end in a vehicle width direction, and a roof side inner panel 20 is joined to a roof side outer panel 18 formed by it, thereby, a roof side rail 12 of a closed cross section structure interposed between a center pillar 16 and a roof panel 14 is formed. In the roof side rail 12, a reinforcement member 38 for laying the upper wall 18A and the lower wall 18B at a position left from the side wall 18C is arranged. COPYRIGHT: (C)2008,JPO&INPIT

Naoki Sato

Papers

Charge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices

Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes

Subdifferential operator approach to a class of nonlinear systems for Stefan problems with phase relaxation

Light- and ion-gauge-induced space charges in tris-(8-hydroxyquinolate) aluminum-based organic light-emitting diodes

Roof side structure