N
Naoto Kikuchi
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 107
Citations - 2398
Naoto Kikuchi is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 20, co-authored 102 publications receiving 2236 citations. Previous affiliations of Naoto Kikuchi include University of Tokyo & Kanazawa Institute of Technology.
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Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
TL;DR: In this article, a working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding, and three new materials are presented as examples.
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Electrical and structural properties of Ni-doped Cu2O films prepared by pulsed laser deposition
Naoto Kikuchi,Kazuhiko Tonooka +1 more
TL;DR: In this paper, the electrical and structural properties of Ni-doped Cu 2 O (Cu 2 O:Ni) films prepared by the pulsed laser deposition (PLD) from CuO:Ni targets were studied.
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Electrical and mechanical properties of SnO2:Nb films for touch screens
TL;DR: In this paper, X-ray diffraction (XRD) measurements of sintered SnO 2 :Nb specimen and the Rietvelt analysis of the XRD pattern were also carried out in order to find the doping effect of Nb to SnO2.
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Preparation of transparent CuCrO2:Mg/ZnO p n junctions by pulsed laser deposition
Kazuhiko Tonooka,Naoto Kikuchi +1 more
TL;DR: Transparent p-n heterojunctions composed of zinc oxide, copper-chromium oxide, and indium tin oxide (ITO) films were fabricated by pulsed laser deposition (PLD) on glass substrates at temperatures as low as 500°C as discussed by the authors.
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Preparation of transparent conductive TiO2: Nb thin films by pulsed laser deposition
TL;DR: In this paper, the optical and electrical properties of Nb-doped TiO2 thin films prepared by pulsed laser deposition (PLD) were investigated, and it was shown that the deposition at room temperature in 0.92 ¼ Pa O2 was suitable to produce anatase-type TiO 2.