N
Neil Patel
Researcher at Massachusetts Institute of Technology
Publications - 29
Citations - 1096
Neil Patel is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Photonic crystal & Chalcogenide glass. The author has an hindex of 8, co-authored 26 publications receiving 1029 citations. Previous affiliations of Neil Patel include Charles Stark Draper Laboratory.
Papers
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Journal ArticleDOI
An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
TL;DR: Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.
Journal ArticleDOI
Mid-infrared materials and devices on a Si platform for optical sensing
Vivek Singh,Pao Tai Lin,Neil Patel,Hongtao Lin,Lan Li,Yi Zou,Fei Deng,Chaoying Ni,Juejun Hu,James Giammarco,Anna Paola Soliani,Bogdan Zdyrko,Igor Luzinov,Spencer Novak,Jackie Novak,Peter Wachtel,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Lionel C. Kimerling,Anuradha M. Agarwal +20 more
TL;DR: This article discusses the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling ofMid-IR light from the waveguide to the detector.
Proceedings ArticleDOI
An electrically pumped Ge-on-Si laser
Jurgen Michel,Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Birendra (Raj) Dutt,Lionel C. Kimerling +7 more
TL;DR: In this article, the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm was presented.
Journal ArticleDOI
Point defect states in Sb-doped germanium
TL;DR: In this paper, the defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy and the relationships between the four observable defects were investigated.
Journal ArticleDOI
Electrospray deposition of quantum dot-doped Ge23Sb7S70 chalcogenide glass films
Cheng Li,Spencer Novak,Spencer Novak,Sergey A. Denisov,Nathan D. McClenaghan,Neil Patel,Anu Agarwal,Kathleen Richardson,Kathleen Richardson,Weiwei Deng +9 more
TL;DR: In this paper, the incorporation of quantum dots (QDs) into chalcogenide glass films is attractive for their luminescent properties, and the parameters of the electrospray process are prudently chosen to ensure one or none QDs is enclosed per liquid droplet.