L
Lionel C. Kimerling
Researcher at Massachusetts Institute of Technology
Publications - 768
Citations - 32831
Lionel C. Kimerling is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Silicon & Waveguide (optics). The author has an hindex of 87, co-authored 757 publications receiving 30996 citations. Previous affiliations of Lionel C. Kimerling include Bell Labs & Alcatel-Lucent.
Papers
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High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
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Photonic-bandgap microcavities in optical waveguides
James Foresi,Pierre R. Villeneuve,J. Ferrera,E.R. Thoen,Günter Steinmeyer,Shanhui Fan,John D. Joannopoulos,Lionel C. Kimerling,Henry I. Smith,Erich P. Ippen +9 more
TL;DR: In this paper, the authors measured microcavity resonances in two-and three-dimensional photonic-bandgap (PBG) structures integrated directly into a sub-micrometre-scale silicon waveguide.
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Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
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On-chip optical isolation in monolithically integrated non-reciprocal optical resonators
Lei Bi,Juejun Hu,Peng Jiang,Dong-Hun Kim,Gerald F. Dionne,Lionel C. Kimerling,Caroline A. Ross +6 more
TL;DR: In this article, a non-reciprocal optical resonator with a small length footprint of 290 µm on a silicon-on-insulator substrate is presented, achieving unidirectional optical transmission with an isolation ratio of up to 19.5 dB near the telecommunications wavelength of 1,550 nm in a homogeneous external magnetic field.
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An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
TL;DR: Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.