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Nicolas M. Andrade

Researcher at University of California, Berkeley

Publications -  15
Citations -  301

Nicolas M. Andrade is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Slot antenna & Spontaneous emission. The author has an hindex of 3, co-authored 15 publications receiving 246 citations. Previous affiliations of Nicolas M. Andrade include Virginia Commonwealth University & Harvard University.

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Journal ArticleDOI

Second harmonic generation in nano-structured thin-film lithium niobate waveguides.

TL;DR: In this article, phase-matched second harmonic generation in thin-film lithium niobate waveguides with sub-micron dimensions has been demonstrated and experimentally demonstrated with low-loss (~3.0 dB/cm) nanowaveguides.
Journal ArticleDOI

Second harmonic generation in nano-structured thin-film lithium niobate waveguides

TL;DR: Efficient, phase-matched second harmonic generation in lithographically-defined thin-film lithium niobate waveguides with sub-micron dimensions is demonstrated in a next-generation wavelength conversion system.
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Inverse design optimization for efficient coupling of an electrically injected optical antenna-LED to a single-mode waveguide.

TL;DR: An integrated antenna-LED on a single-mode optical waveguide achieved a waveguide coupling efficiency of 94% and an antenna efficiency of 64%, while maintaining a high average enhancement of 144 - potentially enabling >100GHz direct modulation.
Proceedings ArticleDOI

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

TL;DR: In this article, near-field scanning optical microscopy was applied to investigate the spatial variations of extended defects and their effects on the optical quality for semi-polar (1-101) and (11-22) InGaN light emitting diodes (LEDs).
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Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges

TL;DR: In this article, a surface passivation method was proposed to reduce the surface recombination velocity of InGaAsP/InGaA/INGaAs material to 45 cm/s by combining sulfur-saturated ammonium sulfide and atomic layer deposition.