Roza Kotlyar

TL;DR: In this paper, the authors compared the properties of carbon nanoribbons and carbon nanotubes and found that the low-and high-field mobilities of the carbon nanobbons are significantly higher than those of silicon and thus are better suited for low power applications.

TL;DR: The importance of process variation in modern transistor technology is discussed, front-end variation sources are reviewed, device and circuit variation measurement techniques are presented, and recent intrinsic transistor variation performance from the literature is compared.

TL;DR: In this paper, the steepest sub-threshold swing (SS < 60mV/decade) was achieved in a III-V TFET by using thin gate oxide, heterojunction engineering and high source doping.

TL;DR: In this article, a comprehensive quantum anisotropic transport model for holes was used to study silicon PMOS inversion layer transport under arbitrary stress, and the results showed that the hole band structure is dominated by 12 "wings", where mechanical stress, as well as the vertical field under certain stress conditions, can alter the energies of the few lowest hole subbands, changing the transport effective mass, density of states, and scattering rates, and thus affecting the mobility.

TL;DR: In this paper, the Schrodinger-Poisson equations were used to calculate phonon-limited electron mobility in a multisubband cylindrical Si gated wire and found that the benefit of reduced 1D electron states is offset by an increased phononscattering rate due to increased electron-phonon wave function overlap and results in a degraded mobility in narrow wires.