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Nirakar Poudel

Researcher at University of Southern California

Publications -  15
Citations -  411

Nirakar Poudel is an academic researcher from University of Southern California. The author has contributed to research in topics: Graphene & Plasmon. The author has an hindex of 9, co-authored 15 publications receiving 287 citations.

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Recent Progress on Stability and Passivation of Black Phosphorus.

TL;DR: The fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed and device performances of encapsulated BP are compared with nonencapsulated BP.
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Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

TL;DR: Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO2/Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate.
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Cross-Plane Seebeck Coefficient Measurement of Misfit Layered Compounds (SnSe)n(TiSe2)n (n = 1,3,4,5)

TL;DR: The Seebeck coefficient measured across the (SnSe)n(TiSe2)n samples was found to depend strongly on the number of layers in the supercell (n), and this difference is due to the different carrier types in the n-SnSe and p- TiSe2 layers and the effect of tunneling on the cross-plane transport.
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Hot electron-driven photocatalysis and transient absorption spectroscopy in plasmon resonant grating structures

TL;DR: Here, hot holes photoexcited in the metal are used to drive the oxygen evolution reaction (OER), producing a measurable photocurrent, and transient absorption spectroscopy of these plasmon resonant grating structures is performed.
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Effects of basal-plane thermal conductivity and interface thermal conductance on the hot spot temperature in graphene electronic devices

TL;DR: In this article, the authors investigated the effect of voltage and localized heating on the peak temperature of the transfer of graphene grown by chemical vapor deposition to an oxidized Si substrate, and developed numerical and analytical models to explain the results based on the reported basal-plane thermal conductivity, κ, and interfacial thermal conductance, G, of graphene.