Showing papers in "Applied Physics Letters in 2017"

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Abstract: Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Abstract: Piezoelectricity is a unique material property that converts mechanical energy into electricity or vice versa. Starting from the group-III monochalcogenide monolayers, we design a series of derivative Janus structures for piezoelectric materials, including Ga2SSe, Ga2STe, Ga2SeTe, In2SSe, In2STe, In2SeTe, GaInS2, GaInSe2, and GaInTe2. Our first-principles calculations show that these Janus structures are thermodynamically and dynamically stable. They have a bandgap in the range of 0.89–2.03 eV, lower than those of the perfect monolayers, and Ga2STe, Ga2SeTe, In2STe, and In2SeTe monolayers are direct gap semiconductors. They possess piezoelectric coefficients up to 8.47 pm/V, over four times the maximum value obtained in perfect group-III monochalcogenide monolayers. Moreover, the broken mirror symmetry of these Janus structures induces out-of-plane dipolar polarization, yielding additional out-of-plane piezoelectric coefficients of 0.07–0.46 pm/V. The enhanced piezoelectric properties enable the developme...

Electrically tunable all-dielectric optical metasurfaces based on liquid crystals

Abstract: We demonstrate electrical tuning of the spectral response of a Mie-resonant dielectric metasurface consisting of silicon nanodisks embedded into liquid crystals. We use the reorientation of nematic liquid crystals in a moderate applied electric field to alter the anisotropic permittivity tensor around the metasurface. By switching a control voltage “on” and “off,” we induce a large spectral shift of the metasurface resonances, resulting in an absolute transmission modulation of up to 75%. Our experimental demonstration of voltage control of dielectric metasurfaces paves the way for new types of electrically tunable metadevices, including dynamic displays and holograms.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Broadband metamaterial for optical transparency and microwave absorption

Abstract: We present a metamaterial for simultaneous optical transparency and microwave absorption in broadband, which can be used as an optically transparent radar-wave absorber. The proposed metamaterial absorber is made of windmill-shaped elements with the reflection spectra featured by three absorption bands. By properly tailoring the resonances of the structure, we achieve the optimized metamaterial absorptivity that is greater than 90% from 8.3 to 17.4 GHz. In the meantime, excellent optical transmittance is achieved by use of the indium tin oxide (ITO) film with moderate surface resistance, implying that the optical properties of the metamaterial are hardly affected by the periodic meta-atoms. Both numerical simulations and experimental results demonstrate the good performance of the proposed metamaterial, thereby enabling a wide range of applications such as ultrathin detectors and photovoltaic solar cells in the future.

Experimental prototype of a spin-wave majority gate

Abstract: Featuring low heat dissipation, devices based on spin-wave logic gates promise to comply with increasing future requirements in information processing. In this work, we present the experimental realization of a majority gate based on the interference of spin waves in an Yttrium-Iron-Garnet-based waveguiding structure. This logic device features a three-input combiner with the logic information encoded in a phase of 0 or π of the input spin waves. We show that the phase of the output signal represents the majority of the three phase states of the spin waves in the three inputs. A switching time of about 10 ns in the prototype device provides evidence for the ability of sub-nanosecond data processing in future down-scaled devices.

High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Abstract: In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial beta-Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The (-201)-oriented beta-Ga2O3 thin film was grown using plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4V with a UV to visible rejection ratio > 10(5). The devices exhibited very low dark current 10(3). These results represent the state-of-art performance for the MBE-grown beta-Ga2O3 MSM solar blind detector. Published by AIP Publishing.

Sensing with toroidal metamaterial

Abstract: Localized electromagnetic excitation in the form of toroidal dipoles has recently been observed in metamaterial systems. The origin of the toroidal dipole lies in the currents flowing on the surface of a torus. Thus, the exotic toroidal excitations play an important role in determining the optical properties of a system. Toroidal dipoles also contribute towards enabling high quality factor subwavelength resonances in metamaterial systems which could be an excellent platform for probing the light matter interaction. Here, we demonstrate sensing with toroidal resonance in a two-dimensional terahertz metamaterial in which a pair of mirrored asymmetric Fano resonators possesses anti-aligned magnetic moments at an electromagnetic resonance that gives rise to a toroidal dipole. Our proof of concept demonstration opens up an avenue to explore the interaction of matter with toroidal multipoles that could have strong applications in the sensing of dielectrics and biomolecules.

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Abstract: We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (∼1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.

Enhanced energy storage density by inducing defect dipoles in lead free relaxor ferroelectric BaTiO3-based ceramics

Abstract: In this work, Mn-doped 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3 ceramics were prepared by the conventional solid state reaction method, and the effect of defect dipoles on energy storage properties of lead free relaxor ferroelectric BaTiO3-based ceramics was studied. The crystal structure, dielectric properties, and energy storage properties were explored in detail. It was found that polarization hysteresis (P-E) loops of 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-x wt. % MnCO3 (0.2–0.5) ceramics took on high maximum polarization (Pmax) and low remanent polarization (Pr). Meanwhile, recoverable energy density (Wrec) and energy conversion efficiency (η) were obviously enhanced by inducing defect dipoles into BaTiO3-Bi(Mg2/3Nb1/3)O3 relaxor ferroelectrics. The 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-0.3 wt. % MnCO3 ceramic was found to exhibit good energy storage properties with a Wrec of about 1.70 J/cm3 and a η ∼ 90% under an electric field of 210 kV/cm. The breakdown electric field and Wrec of BaTiO3-based materials were significantly increased in the present work, and they might be good candidates for high power energy storage applications.

Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Abstract: Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 A. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Abstract: We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO

Abstract: We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall bars on antiferromagnetic NiO(111) single crystals. An SMR with a sign opposite to conventional SMR is observed over a wide range of temperatures as well as magnetic fields stronger than 0.25 T. The negative sign of the SMR can be explained by the alignment of magnetic moments being almost perpendicular to the external magnetic field within the easy plane (111) of the antiferromagnet. This correlation of magnetic moment alignment and the external magnetic field direction is realized just by the easy-plane nature of the material without the need of any exchange coupling to an additional ferromagnet. The SMR signal strength decreases with increasing temperature, primarily due to the decrease in Neel order by including fluctuations. An increasing magnetic field increases the SMR signal strength as there are fewer domains, and the magnetic moments are more strongly manipulated at high magnetic fields. The SMR is saturated at an applied magnetic field of 6 T, resulting in a spin-mixing conductance of similar to 10(18) Omega(-1) m(-2), which is comparable to that of Pt on insulating ferrimagnets such as yttrium iron garnet. An argon plasma treatment doubles the spin-mixing conductance. Published by AIP Publishing.

Substrate-induced strain and charge doping in CVD-grown monolayer MoS2

Abstract: Due to its electronic-grade quality and potential for scalability, two-dimensional (2D) MoS2 synthesized by chemical vapor deposition (CVD) has been widely explored for electronic/optoelectronic applications. As 2D MoS2 can be considered a 100% surface, its unique intrinsic properties are inevitably altered by the substrate upon which it is grown. However, systematic studies of substrate-layer interactions in CVD-grown MoS2 are lacking. In this study, we have analyzed built-in strain and charge doping using Raman and photoluminescence spectroscopy in 2D MoS2 grown by CVD on four unique substrates: SiO2/Si, sapphire, Muscovite mica, and hexagonal boron nitride. We observed decreasing strain and charge doping in grown MoS2 as the substrates become less rough and more chemically inert. The possible origin of strain was investigated through atomic force microscopy roughness measurements of the as-grown layer and substrate. Our results provide direction for device optimization through careful selection of the ...

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Abstract: We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Placing single atoms in graphene with a scanning transmission electron microscope

Abstract: We employ the sub-atomically focused beam of a scanning transmission electron microscope (STEM) to introduce and controllably manipulate individual dopant atoms in a 2D graphene lattice. The electron beam is used to create defects and subsequently sputter adsorbed source materials into the graphene lattice such that individual vacancy defects are controllably passivated by Si substitutional atoms. We further document that Si point defects may be directed through the lattice via e-beam control or modified (as yet, uncontrollably) to form new defects which can incorporate new atoms into the graphene lattice. These studies demonstrate the potential of STEM for atom-by-atom nanofabrication and fundamental studies of chemical reactions in 2D materials on the atomic level.

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Abstract: High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of ∼0.35 mm2) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850 mA at a peak emission wavelength of 265 nm.

Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

Abstract: GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display applications. In these arrays, each μLED works as a single pixel of a whole image. The electro-optical performance of these μLEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. ...

Phononic crystal Luneburg lens for omnidirectional elastic wave focusing and energy harvesting

Abstract: We explore a phononic crystal Luneburg lens through design, fabrication, and analysis for omnidirectional elastic wave focusing and enhanced energy harvesting both numerically and experimentally. The proposed lens is formed using hexagonal unit cells with blind holes of different diameters, which are determined according to the Luneburg lens refractive index distribution obtained by finite-element simulations of the lowest asymmetric mode Lamb wave band structure. Wave simulations are performed numerically under plane wave excitation from a line source, and focusing is observed at the opposite border of the lens with respect to the incident wave direction. Numerically simulated elastic wave focusing results are validated through a set of experiments. Omnidirectionality is demonstrated by testing the lens under plane wave excitation for different angles of incidence. With piezoelectric energy harvesters located at the boundary of the phononic crystal Luneburg lens, more than an order of magnitude larger po...

3-wave mixing Josephson dipole element

Abstract: Parametric conversion and amplification based on three-wave mixing are powerful primitives for efficient quantum operations. For superconducting qubits, such operations can be realized with a quadrupole Josephson junction element, the Josephson Ring Modulator, which behaves as a loss-less three-wave mixer. However, combining multiple quadrupole elements is a difficult task so it would be advantageous to have a three-wave dipole element that could be tessellated for increased power handling and/or information throughput. Here, we present a dipole circuit element with third-order nonlinearity, which implements three-wave mixing. Experimental results for a non-degenerate amplifier based on the proposed third-order nonlinearity are reported.

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

Abstract: Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25–100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920–1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advanc...

Broadband optical absorption based on single-sized metal-dielectric-metal plasmonic nanostructures with high-ε″ metals

Abstract: We propose a broadband, efficient, ultra-thin metal-insulator-metal (MIM) absorber with a simple single-sized disk configuration by utilizing metals with high imaginary part of permittivity (e″). The physics behind this is that field dissipation is remarkably enhanced in MIM absorbers with high-e″ metals, significantly extending the absorption bandwidths, which are conventionally limited by magnetic resonances of MIM absorbers with low-e″ metals. The experimentally demonstrated MIM absorber based on tungsten with high-e″ yields broadband absorption from visible to near-infrared range (400–1700 nm) with an average measured absorption of 84%. The ultra-thin and single-sized nanostructure with broadband efficient absorption facilitates the scalability to large-area photonic applications.

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 μm wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using reduced pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 μm and 3.1 μm wavelengths, respectively. For the longest wavelength (i.e., 3.1 μm), lasing behavior was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Abstract: A systematic study of Schottky barriers fabricated on (010) β-Ga2O3 substrates is reported Schottky barrier heights (SBHs) and current transport modes were analyzed using a combination of current-voltage (I-V), capacitance-voltage (C-V) and internal photoemission (IPE) measurements for Pd, Ni, Pt and Au Schottky diodes Diodes fabricated for each metal choice displayed nearly ideal I-V characteristics with room temperature ideality factors ranging from 103 to 109, reverse leakage currents below detection limits and thermionic emission as the dominant current transport mode for Ni, Pt and Pd The SBH values varied depending on the metal choice, ranging from 127 V for Pd and 154 V for Ni to 158 V for Pt and 171 V for Au, as determined using IPE measurements Close agreement was observed between these IPE-determined SBH values and the barrier height values from I-V and C-V measurements for the Ni, Pd and Pt Schottky barriers In contrast, for Au, a lack of general agreement was seen between the SBH me

A microfabricated optically-pumped magnetic gradiometer.

Abstract: We report on the development of a microfabricated atomic magnetic gradiometer based on optical spectroscopy of alkali atoms in the vapor phase. The gradiometer, which operates in the spin-exchange relaxation free regime, has a length of 60 mm and cross sectional diameter of 12 mm, and consists of two chip-scale atomic magnetometers which are interrogated by a common laser light. The sensor can measure differences in magnetic fields, over a 20 mm baseline, of 10 fT/ Hz1/2 at frequencies above 20 Hz. The maximum rejection of magnetic field noise is 1000 at 10 Hz. By use of a set of compensation coils wrapped around the sensor, we also measure the sensor sensitivity at several external bias field strengths up to 150 mG. This device is useful for applications that require both sensitive gradient field information and high common-mode noise cancellation.

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter

Abstract: We explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields. For this purpose, we excite a W/CoFeB/Pt trilayer (thickness of 5.6 nm) on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, and wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm−1, and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of its amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range on the sub-picosecond time scale.

Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films

Abstract: Ferroelectric and piezoelectric properties of Hf1-xZrxO2 (HZO) and pure ZrO2 films with a layer thickness of up to 390 nm prepared by chemical solution deposition (CSD) are investigated. The piezoelectric properties are measured using a double-beam laser interferometer (DBLI) and piezoresponse force microscopy. It is shown that for 100 nm thick films, the maximum remanent polarization is found for pure ZrO2 and reduces for the increasing hafnium content. A stable remanent polarization of 8 μC/cm2 is observed for ZrO2 film thicknesses between 195 and 390 nm. A piezoelectric coefficient of 10 pm/V is extracted from unipolar DBLI measurements. The observed thickness limitation for atomic layer deposition deposited HZO based ferroelectrics can be overcome by the CSD deposition technique presented in this work. Thick ZrO2 films are promising candidates for energy related applications such as pyroelectric and piezoelectric energy harvesting and electrocaloric cooling as well as for microelectromechanical systems.

Current-driven skyrmion dynamics in disordered films

Abstract: A theoretical study of the current-driven dynamics of magnetic skyrmions in disordered perpendicularly magnetized ultrathin films is presented. The disorder is simulated as a granular structure, in which the local anisotropy varies randomly from grain to grain. The skyrmion velocity is computed for different disorder parameters and ensembles. Similar behavior is seen for spin-torques due to in-plane currents and the spin Hall effect, where a pinning regime can be identified at low currents with a transition towards the disorder-free case at higher currents, similar to domain wall motion in disordered films. Moreover, a current-dependent skyrmion Hall effect and fluctuations in the core radius are found, which result from the interaction with the pinning potential.

A low-frequency sound absorbing material with subwavelength thickness

Abstract: We propose a sound absorbing material efficient for low frequency This material is mainly composed of two axially coupled tubes in series, which are co-planarly coiled in a plane perpendicular to incident waves By carefully designing the geometric parameters of the coupled tubes, we can overlap the absorption coefficient curves of each individual tube and are therefore able to broaden the frequency bandwidth within which the absorption coefficient is larger than a designed value A material with an absorption coefficient greater than 08 over a frequency bandwidth of 36 Hz for a low frequency of around 100 Hz can be designed, and the wavelength to thickness ratio reaches as high as 385 The experiment measurement with the sample made by the 3D printing technique is also conducted to validate the proposed design method This work may stimulate the research studies on and applications for low frequency sound absorption

Two-dimensional arsenene oxide: A realistic large-gap quantum spin Hall insulator

Abstract: Searching for two-dimensional (2D) realistic materials that are able to realize room-temperature quantum spin Hall effects is currently a growing field. Here, through ab initio calculations, we identify arsenene oxide, AsO, as an excellent candidate, which demonstrates high stability, flexibility, and tunable spin-orbit coupling gaps. In contrast to known pristine or functionalized arsenene, the maximum nontrivial bandgap of AsO reaches 89 meV and can be further enhanced to 130 meV under biaxial strain. By sandwiching 2D AsO between boron nitride sheets, we propose a quantum well in which the band topology of AsO is preserved with a sizeable bandgap. Considering that AsO having fully oxidized surfaces are naturally stable against surface oxidization and degradation, this functionality provides a viable strategy for designing topological quantum devices operating at room temperature.