Crude Oil Emulsion Properties and their Application to Heavy Oil Transportation — Many advances have been made in the field of emulsions in recent years. Emulsion behavior is largely controlled by the properties of the adsorbed layers that stabilize the oil-water surfaces. The knowledge of surface tension alone is not sufficient to understand emulsion properties, and surface rheology plays an important role in a variety of dynamic processes. The complexity of petroleum emulsions comes from the oil composition in terms of surface-active molecules contained in the crude, such as low molecular weight fatty acids, naphthenic acids and asphaltenes. These molecules can interact and reorganize at oil/water interfaces. The pronounced nonlinear behavior of surface rheology for asphaltene layers might explain differences in behavior between surfactant and asphaltene emulsions. These effects are very important in the case of heavy oils because this type of crude contains a large amount of asphaltene and surface-active compounds. This article reviews different petroleum emulsion properties and the transport of high viscosity hydrocarbon as a crude oil in water emulsion.

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Crude Oil Emulsion Properties and Their Application to Heavy Oil Transportation

Ceria and its solid solutions play a vital role in several industrial processes and devices. These include solar energy-to-fuel conversion, solid oxide fuel and electrolyzer cells, memristors, chemical looping combustion, automotive 3-way catalysts, catalytic surface coatings, supercapacitors and recently, electrostrictive devices. An attractive feature of ceria is the possibility of tuning defect-chemistry to increase the effectiveness of the materials in application areas. Years of study have revealed many features of the long-range, macroscopic characteristics of ceria and its derivatives. In this review we focus on an area of ceria defect chemistry which has received comparatively little attention - defect-induced local distortions and short-range associates. These features are non-periodic in nature and hence not readily detected by conventional X-ray powder diffraction. We compile the relevant literature data obtained by thermodynamic analysis, Raman spectroscopy, and X-ray absorption fine structure (XAFS) spectroscopy. Each of these techniques provides insight into material behavior without reliance on long-range periodic symmetry. From thermodynamic analyses, association of defects is inferred. From XAFS, an element-specific probe, local structure around selected atomic species is obtained, whereas from Raman spectroscopy, local symmetry breaking and vibrational changes in bonding patterns is detected. We note that, for undoped ceria and its solid solutions, the relationship between short range order and cation-oxygen-vacancy coordination remains a subject of active debate. Beyond collating the sometimes contradictory data in the literature, we strengthen this review by reporting new spectroscopy results and analysis. We contribute to this debate by introducing additional data and analysis, with the expectation that increasing our fundamental understanding of this relationship will lead to an ability to predict and tailor the defect-chemistry of ceria-based materials for practical applications.

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A review of defect structure and chemistry in ceria and its solid solutions

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar-blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS3 nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific Ag modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few-layered 2D NiPS3 nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 1012 Jones, outperforming some traditional wide-bandgap UV detectors. The wavelength-dependent photoresponsivity measurement allows the direct observation of an admirable cut-off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.

High-Performance Ultraviolet Photodetector Based on a Few-Layered 2D NiPS3 Nanosheet

Single crystalline perovskites exhibit high optical absorption, long carrier lifetime, large carrier mobility, low trap-state-density and high defect tolerance. Unfortunately, all single crystalline perovskites attained so far are limited to bulk single crystals and small area wafers. As such, it is impossible to design highly demanded flexible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area flexible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C6H5C2H4NH3)2PbI4 with area exceeding 2500 mm2 and thinness as little as 0.6 μm. The ultrathin flexible SCM exhibits ultralow defect density, superior uniformity and long-term stability. Using the superior ultrathin membrane, a series of flexible photosensors were designed and fabricated to exhibit very high external quantum efficiency of 26530%, responsivity of 98.17 A W−1 and detectivity as much as 1.62 × 1015 cm Hz1/2 W−1 (Jones). Hybrid halide perovskite single crystals show excellent optoelectronic properties but their small size and large thickness limit their application. Herein Liu et al. grow large area ultrathin flexible crystalline membrane of layered perovskite and demonstrate high detectivity in the flexible photosensors.

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Multi-inch single-crystalline perovskite membrane for high-detectivity flexible photosensors

The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W–1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.

https://link.springer.com/content/pdf/10.1007%2Fs12274-018-2200-z.pdf

In-situ fabrication of PtSe 2 /GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

The article presents a concise review of our investigations on the preferred transition paths followed as well as high-pressure-induced structural changes in nanocrystalline rare-earth sesquioxides that include Y2O3, Sm2O3, Gd2O3, Eu2O3, Dy2O3, Ho2O3, and Yb2O3. The starting phase in all samples was predominantly cubic, as characterized using X-ray diffraction and Raman spectroscopy. The pressure-induced structural changes were primarily tracked via changes in phonon modes in the Raman spectra. The structural transition sequences demonstrated behaviors differing from the polycrystalline trends usually observed; however, it was interesting to note that the onset pressures and subsequent shifts in the phonon modes followed a trend similar to the unpressurized samples when observed with respect to the f-electron number. The mode Gruneisen parameters were estimated from the high-pressure data, which indicated a swifter response to external stimuli as the particle size reduced below an average of 50 nm. It was...

Pressure-Induced Structural Transition Trends in Nanocrystalline Rare-Earth Sesquioxides: A Raman Investigation

The investigation of structural phase transition and anharmonic behavior of Yb2O3 has been carried out by high-pressure and temperature dependent Raman scattering studies respectively. In situ Raman studies under high pressure were carried out in a diamond anvil cell at room temperature which indicate a structural transition from cubic to hexagonal phase at and above 20.6 GPa. In the decompression cycle, Yb2O3 retained its high pressure phase. We have observed a Stark line in the Raman spectra at 337.5 cm−1 which arises from the electronic transition between 2 F 5/2 and 2 F 7/2 multiplates of Yb3+ (4f 13) levels. These were followed by temperature dependent Raman studies in the range of 80–440 K, which show an unusual mode hardening with increasing temperature. The hardening of the most dominant mode (T g + A g ) was analyzed in light of the theory of anharmonic phonon-phonon interaction and thermal expansion of the lattice. Using the mode Gruneisen parameter obtained from high pressure Raman measurements; we have calculated total anharmonicity of the T g + A g mode from the temperature dependent Raman data.

Anharmonic behavior and structural phase transition in Yb2O3

The phase transformation in nano-crystalline dysprosium sesquioxide (Dy2O3) under high pressures is investigated using in situ Raman spectroscopy. The material at ambient was found to be cubic in structure using X-ray diffraction (XRD) and Raman spectroscopy, while atomic force microscope (AFM) showed the nano-crystalline nature of the material which was further confirmed using XRD. Under ambient conditions the Raman spectrum showed a predominant cubic phase peak at 374 cm−1, identified as Fg mode. With increase in the applied pressure this band steadily shifts to higher wavenumbers. However, around a pressure of about 14.6 GPa, another broad band is seen to be developing around 530 cm−1 which splits into two distinct peaks as the pressure is further increased. In addition, the cubic phase peak also starts losing intensity significantly, and above a pressure of 17.81 GPa this peak almost completely disappears and is replaced by two strong peaks at about 517 and 553 cm−1. These peaks have been identified as occurring due to the development of hexagonal phase at the expense of cubic phase. Further increase in pressure up to about 25.5 GPa does not lead to any new peaks apart from slight shifting of the hexagonal phase peaks to higher wavenumbers. With release of the applied pressure, these peaks shift to lower wavenumbers and lose their doublet nature. However, the starting cubic phase is not recovered at total release but rather ends up in monoclinic structure. The factors contributing to this anomalous phase evolution would be discussed in detail. Copyright © 2010 John Wiley & Sons, Ltd.

Nita Dilawar Sharma

Papers

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

Pressure-Induced Structural Transition Trends in Nanocrystalline Rare-Earth Sesquioxides: A Raman Investigation

Anharmonic behavior and structural phase transition in Yb2O3

Pressure-induced anomalous phase transformation in nano-crystalline dysprosium sesquioxide