G
Govind Gupta
Researcher at Council of Scientific and Industrial Research
Publications - 285
Citations - 5273
Govind Gupta is an academic researcher from Council of Scientific and Industrial Research. The author has contributed to research in topics: Chemistry & Photoluminescence. The author has an hindex of 29, co-authored 190 publications receiving 3286 citations. Previous affiliations of Govind Gupta include The National Academy of Sciences, India & Academy of Scientific and Innovative Research.
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Plant Growth Promoting Rhizobacteria (PGPR): Current and Future Prospects for Development of Sustainable Agriculture
TL;DR: In this paper, the use of plant growth promoting rhizobacteria (PGPR) is a better alternative to solve the problem of chemical fertilizers used in the agriculture to increase yields, kill pathogens, pests, and weeds.
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High permittivity polyaniline–barium titanate nanocomposites with excellent electromagnetic interference shielding response
TL;DR: This work reports for the first time a correlation between the structural, electrical, and electromagnetic properties of polyaniline-tetragonal BaTiO3 (TBT) nanocomposites prepared by in-situ emulsion polymerization and the possibility of using these materials in stealth technology and for making futuristic radar absorbing materials (RAMs).
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Faster response of NO 2 sensing in graphene-WO 3 nanocomposites
Shubhda Srivastava,Kiran Jain,Vijai Singh,Sukhvir Singh,N. Vijayan,Nita Dilawar,Govind Gupta,T.D. Senguttuvan +7 more
TL;DR: Graphene-WO3 nanocomposite thin-layer sensors were prepared by drop coating the dispersed solution onto the alumina substrate as mentioned in this paper, which was used for the detection of NO2 for the first time.
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Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Abhiram Gundimeda,Shibin Krishna,Neha Aggarwal,Alka Sharma,Nita Dilawar Sharma,K.K. Maurya,Sudhir Husale,Govind Gupta +7 more
TL;DR: In this article, the fabrication of ultraviolet photodetector on non-polar (11−20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1−102) sapphire substrate was reported.
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Mg3Sb2-based Zintl compound: a non-toxic, inexpensive and abundant thermoelectric material for power generation
Anil Bhardwaj,A. Rajput,A. K. Shukla,Jiji Pulikkotil,Avanish Kumar Srivastava,Ajay Dhar,Govind Gupta,Sushil Auluck,Dinesh K. Misra,R. C. Budhani +9 more
TL;DR: In this paper, a proof of principal has been established experimentally in the present work for a Zintl compound of Mg3Sb2 and its derivative of isoelectronically Bi doped Bi; Mg 3Sb 2−xBix (0 ≤ x ≤ 0.4) alloys in Mg