O
O. L. Gonçalez
Researcher at Instituto Tecnológico de Aeronáutica
Publications - 42
Citations - 238
O. L. Gonçalez is an academic researcher from Instituto Tecnológico de Aeronáutica. The author has contributed to research in topics: Neutron & South Atlantic Anomaly. The author has an hindex of 8, co-authored 38 publications receiving 198 citations. Previous affiliations of O. L. Gonçalez include National Nuclear Energy Commission & Chicago Transit Authority.
Papers
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Journal ArticleDOI
TID in Flash-Based FPGA: Power Supply-Current Rise and Logic Function Mapping Effects in Propagation-Delay Degradation
Fernanda Lima Kastensmidt,E. C. P. Fonseca,Rafael Galhardo Vaz,O. L. Gonçalez,Raul Chipana,Gilson Wirth +5 more
TL;DR: In this paper, a flash-based FPGA was exposed to radiation to measure variations in current, temperature, propagation-delay and duty-cycle in logic circuits, and electrical simulations were carried out to study the difference of behavior in the degradation of different logic mappings.
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Comparação de Técnicas FTIR de Transmissão, Reflexão e Fotoacústica na Análise de Poliamida-6, Reciclada e Irradiada
Maria Cecilia Evora,O. L. Gonçalez,Rita C. L. Dutra,Milton F. Diniz,Hélio Wiebeck,Leonardo Gondim de Andrade e Silva +5 more
TL;DR: In this paper, a comparative study involving transmission, reflection and photoacoustic FTIR techniques is presented with analysis of polyamide-6 with a 1.5 MeV electron beam with a 500kGY dose, in the presence of O2.
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Neutron spectra measurements in the south Atlantic anomaly region
TL;DR: In this article, the results of measurements of the cosmic-ray neutron induced flux and spectra from the ground level up to the altitude of 2400m, in the region between 22° S and 45° W, which is under the influence of the South Atlantic Anomaly (SAA), were presented.
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Improving MOSFETs’ TID Tolerance Through Diamond Layout Style
L. E. Seixas,O. L. Gonçalez,Roseane Souza,Saulo Finco,Rafael Galhardo Vaz,G. A. da Silva,S. P. Gimenez +6 more
TL;DR: In this paper, an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide semiconductor field effect transistors (MOSFETs), regarding the same bias conditions during irradiation.
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Open innovation as an alternative for strategic development in the aerospace industry in Brazil
TL;DR: In this paper, the authors present a case of technological competence development in the aerospace sector in Brazil, by addressing the complete cycle of integrated circuits for satellite applications, an area of high technology which is strategic to the country.