O
Olivier Latry
Researcher at University of Rouen
Publications - 80
Citations - 339
Olivier Latry is an academic researcher from University of Rouen. The author has contributed to research in topics: High-electron-mobility transistor & Transistor. The author has an hindex of 9, co-authored 78 publications receiving 283 citations. Previous affiliations of Olivier Latry include Institut national des sciences appliquées de Rouen & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Gate oxide degradation of SiC MOSFET under short-circuit aging tests
TL;DR: A short-circuit aging test was developed to characterize the electrical parameter evolution and the threshold voltage and gate drain capacitance seem to be relevant degradation indicators that indicate a gate oxide degradation.
Proceedings ArticleDOI
Optical generation of 43 Gbit/s phase-shaped binary transmission format from DPSK signal using 50 GHz periodic optical filter
TL;DR: In this paper, a novel method to optically generate PSBT format at 43 Gbit/s was proposed and compared with NRZ format showing reduced OSNR penalty by 0.7 and 1.3 dB for 4.10-3 (FEC limit) and 10-5 BER, respectively.
Journal ArticleDOI
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test
Jean Baptiste Fonder,Jean Baptiste Fonder,Laurence Chevalier,Cécile Genevois,Olivier Latry,Cédric Duperrier,Farid Temcamani,Hichame Maanane +7 more
TL;DR: The physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs showed a pinch-off voltage shift, a decrease of output power and average drain current while Photon Emission Microscopy was used to identify the degradation distribution along the 80 fingers die.
Journal ArticleDOI
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET
TL;DR: An approach of short circuit ageing allowing further microstructural analysis that is needed for the identification of failure mechanisms is described and successfully correlates electrical measurements and structural analyses for an elementary cell of SiC MOSFET power transistor.
Journal ArticleDOI
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
Olivier Latry,Pascal Dherbécourt,Karine Mourgues,Hichame Maanane,Jean Pierre Sipma,F. Cornu,Philippe Eudeline,Mohamed Masmoudi +7 more
TL;DR: Robustness and ruggedness are shown for LDMOS with this bench for radar applications in L-band and with tracking all this parameters that only few hot carrier injection phenomenon appear with no incidence on RF figures of merit (Pout or PAE).