O
Omkar Jani
Researcher at Georgia Institute of Technology
Publications - 18
Citations - 998
Omkar Jani is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Band gap. The author has an hindex of 10, co-authored 15 publications receiving 975 citations. Previous affiliations of Omkar Jani include University of Delaware.
Papers
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Journal ArticleDOI
Design and characterization of GaN∕InGaN solar cells
TL;DR: In this article, the III-V nitrides were used as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%.
Journal ArticleDOI
Very high efficiency solar cell modules
Allen Barnett,Douglas Kirkpatrick,Christiana B. Honsberg,Duncan T. Moore,Mark Wanlass,Keith Emery,Richard G. Schwartz,D.E. Carlson,Stuart Bowden,Daniel J. Aiken,Allen L. Gray,Sarah Kurtz,Lawrence L. Kazmerski,Myles A. Steiner,J.L. Gray,Tom Davenport,Roger F. Buelow,Laszlo A. Takacs,Narkis E. Shatz,John C. Bortz,Omkar Jani,Omkar Jani,Keith W. Goossen,Fouad Kiamilev,A. Doolittle,Ian T. Ferguson,Blair L. Unger,Greg Schmidt,Eric R. Christensen,David Salzman +29 more
TL;DR: The very high efficiency solar cell (VHESC) program is developing integrated optical system-PV modules for portable applications that operate at greater than 50% efficiency as mentioned in this paper.
Proceedings ArticleDOI
Characterization and analysis of InGaN photovoltaic devices
Omkar Jani,Christiana B. Honsberg,Ali Asghar,David Nicol,Ian T. Ferguson,A. Doolittle,Sarah Kurtz +6 more
TL;DR: In this article, the InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices, which are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency.
Journal ArticleDOI
Correlation of crystalline defects with photoluminescence of InGaN layers
Nikolai Faleev,Balakrishnam Jampana,Omkar Jani,Hongbo Yu,Robert L. Opila,Ian T. Ferguson,Christiana B. Honsberg +6 more
TL;DR: In this paper, structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness.
Proceedings ArticleDOI
Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells
Omkar Jani,Christiana B. Honsberg,Yong Huang,J.-O. Song,Ian T. Ferguson,Gon Namkoong,Elaissa Trybus,A. Doolittle,Sarah Kurtz +8 more
TL;DR: In this article, solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies, and the fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%.