O
Osamu Kubo
Researcher at Osaka University
Publications - 73
Citations - 1072
Osamu Kubo is an academic researcher from Osaka University. The author has contributed to research in topics: Scanning tunneling microscope & Surface reconstruction. The author has an hindex of 18, co-authored 72 publications receiving 915 citations. Previous affiliations of Osamu Kubo include National Institute for Materials Science.
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Journal ArticleDOI
Multilayer Silicene Nanoribbons
Paola De Padova,Osamu Kubo,Bruno Olivieri,Claudio Quaresima,Tomonobu Nakayama,Tomonobu Nakayama,Masakazu Aono,Guy Le Lay +7 more
TL;DR: This work reveals the growth of high aspect ratio, perfectly straight, and aligned silicon nanoribbons, exhibiting pyramidal cross section in multistacks of silicene, which is very promising for potential applications.
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Epitaxially grown WOx nanorod probes for sub-100nm multiple-scanning-probe measurement
TL;DR: Tungsten suboxide (WOx) nanorods that are directly grown on electrochemically etched tungsten (W) tips are used as probes of a double-scanning-probe tunneling microscope as discussed by the authors.
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Visible-Light-Activated Response Originating from Carrier-Mobility Modulation of NO2 Gas Sensors Based on MoS2 Monolayers.
TL;DR: In this article, a field effect transistor (FET) gas sensor was fabricated based on thin layers of molybdenum disulfide (MoS2) monolayers and investigated their photoactivated gas responses to NO2 gas under illumination at various irradiances of visible light.
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Development and Application of Multiple-Probe Scanning Probe Microscopes
Tomonobu Nakayama,Osamu Kubo,Yoshitaka Shingaya,Seiji Higuchi,Seiji Higuchi,Tsuyoshi Hasegawa,Chun-Sheng Jiang,Taichi Okuda,Yuji Kuwahara,Kazuhiro Takami,Masakazu Aono +10 more
TL;DR: A quadruple-probe AFM (QP-AFM) with four conductive tuning-fork-type self-detection force sensing probes has been developed to measure the conductivity of a nanostructure on an insulating substrate.
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Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction
TL;DR: The graphene/MoS2 heterojunction device demonstrated a significant change in resistance, by a factor of greater than 103, upon exposure to 1 ppm NO2 under a reverse-bias condition, which was revealed to be a direct reflection of the modulation of the Schottky barrier height at the graphene/ MoS2 interface.