O
Osman Pakma
Researcher at Batman University
Publications - 28
Citations - 638
Osman Pakma is an academic researcher from Batman University. The author has contributed to research in topics: Thermionic emission & Thin film. The author has an hindex of 12, co-authored 23 publications receiving 524 citations. Previous affiliations of Osman Pakma include Ankara University & Muğla University.
Papers
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Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis
TL;DR: In this article, the effect of substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO 2 films prepared by a spray deposition method was investigated, where the films were deposited at various substrate temperatures ranging from 300-500°C in steps of 50°C and characterized by different optical and structural techniques.
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The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
TL;DR: In this paper, the temperature dependence of the experimental I-V data of the Al/TiO2/p-Si (MIS) structures has revealed the existence of a double GD with mean BH values (ϕ¯b0) of 1.634 eV and 31.42
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Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+ (MOS) structures
TL;DR: In this paper, the frequency and voltage dependence of the dielectric constant (e'), e'' loss (e''), loss tangent (tan δ), electric modulus (M' and M'') and ac electrical conductivity (σac) of Al/TiO2/p-Si (MOS) structures has been investigated using the capacitance-voltage (C−V) and conductance-voltages (G/ω-V) characteristics.
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The influence of series resistance and interface states on intersecting behavior of I–V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures
TL;DR: In this article, the intersection behavior of the forward bias currentvoltage (I-V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100-300 K was investigated.
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The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
A. Sertap Kavasoglu,Fahrettin Yakuphanoglu,Nese Kavasoglu,Osman Pakma,Ozcan Birgi,Sener Oktik +5 more
TL;DR: In this article, temperature dependent current-voltage measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed and the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K.