Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

Semiconductor Clusters, Nanocrystals, and Quantum Dots

Highly luminescent semiconductor quantum dots (zinc sulfide-capped cadmium selenide) have been covalently coupled to biomolecules for use in ultrasensitive biological detection. In comparison with organic dyes such as rhodamine, this class of luminescent labels is 20 times as bright, 100 times as stable against photobleaching, and one-third as wide in spectral linewidth. These nanometer-sized conjugates are water-soluble and biocompatible. Quantum dots that were labeled with the protein transferrin underwent receptor-mediated endocytosis in cultured HeLa cells, and those dots that were labeled with immunomolecules recognized specific antibodies or antigens.

http://science.sciencemag.org/content/sci/281/5385/2016.full.pdf

Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection

A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.

/pdf/a-laser-ablation-method-for-the-synthesis-of-crystalline-102tprgisp.pdf

A laser ablation method for the synthesis of crystalline semiconductor nanowires

We report a synthesis of highly luminescent (CdSe)ZnS composite quantum dots with CdSe cores ranging in diameter from 23 to 55 A. The narrow photoluminescence (fwhm ≤ 40 nm) from these composite dots spans most of the visible spectrum from blue through red with quantum yields of 30−50% at room temperature. We characterize these materials using a range of optical and structural techniques. Optical absorption and photoluminescence spectroscopies probe the effect of ZnS passivation on the electronic structure of the dots. We use a combination of wavelength dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, small and wide angle X-ray scattering, and transmission electron microscopy to analyze the composite dots and determine their chemical composition, average size, size distribution, shape, and internal structure. Using a simple effective mass theory, we model the energy shift for the first excited state for (CdSe)ZnS and (CdSe)CdS dots with varying shell thickness. Finally, we characterize the...

(CdSe)ZnS Core-Shell Quantum Dots - Synthesis and Characterization of a Size Series of Highly Luminescent Nanocrystallites

Similar to its popular older cousins the fullerene, the carbon nanotube, and graphene, the latest form of nanocarbon, the carbon nanodot, is inspiring intensive research efforts in its own right. These surface-passivated carbonaceous quantum dots, so-called C-dots, combine several favorable attributes of traditional semiconductor-based quantum dots (namely, size- and wavelength-dependent luminescence emission, resistance to photobleaching, ease of bioconjugation) without incurring the burden of intrinsic toxicity or elemental scarcity and without the need for stringent, intricate, tedious, costly, or inefficient preparation steps. C-dots can be produced inexpensively and on a large scale (frequently using a one-step pathway and potentially from biomass waste-derived sources) by many approaches, ranging from simple candle burning to in situ dehydration reactions to laser ablation methods. In this Review, we summarize recent advances in the synthesis and characterization of C-dots. We also speculate on their future and discuss potential developments for their use in energy conversion/storage, bioimaging, drug delivery, sensors, diagnostics, and composites.

Luminescent Carbon Nanodots: Emergent Nanolights

The dynamics and spectroscopy of silicon nanocrystals that emit at visible wavelengths were analyzed. Size-selective precipitation and size-exclusion chromatography cleanly separate the silicon nanocrystals from larger crystallites and aggregates and provide direct evidence for quantum confinement in luminescence. Measured quantum yields are as high as 50 percent at low temperature, principally as a result of efficient oxide passivation. Despite a 0.9—electron-volt shift of the band gap to higher energy, the nanocrystals behave fundamentally as indirect gap materials with low oscillator strength.

https://science.sciencemag.org/content/sci/262/5137/1242.full.pdf

Quantum confinement in size-selected, surface-oxidized silicon nanocrystals.

Near-edge and extended x-ray-absorption fine-structure measurements from a wide variety of oxidized Si nanocrystals and H-passivated porous Si samples, combined with electron microscopy, ir absorption, forward recoil scattering, and luminescence emission data, provide a consistent structural picture of the species responsible for the luminescence observed in these systems. For porous Si samples whose luminescence wavelengths peak in the visible region, i.e., at {lt}700 nm, their mass-weighted-average structures are determined here to be particles (not wires) whose short-range character is crystalline and whose dimensions---typically {lt}15 A---are significantly smaller than previously reported or proposed. Results are also presented which demonstrate that the observed visible luminescence is not related to either a photo-oxidized Si species in porous Si or an interfacial suboxide species in the Si nanocrystals. The structural and compositional findings reported here depend only on sample luminescence behavior, not on how the luminescent particles are produced, and thus have general implications in assigning quantum confinement as the mechanism responsible for the visible luminescence observed in both nanocrystalline and porous silicon.

Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

The structural characterization, electronic spectroscopy, and excited-state dynamics of surface-oxidized Si nanocrystals, prepared in a high-temperature aerosol apparatus, are studied to gain insight into the emission mechanism of visible light from these systems. The results are compared with direct-gap CdSe nanocrystals, indirect-gap AgBr nanocrystals, bulk crystalline silicon, and porous silicon thin films. As the size of the Si crystallites decreases to 1-2 nm in diameter, the band gap and luminescence energy correspondingly increase to near 2.0 eV, or 0.9 eV above the bulk 1.1-eV band gap. The absorption and luminescence spectra remain indirect-gap-like with strong transverse optical vibronic origins. The quantum yield increases to about 5% at room temperature, but the unimolecular radiative rate remains quite long, approximately 10{sup {minus}3}-10{sup {minus}4} s{sup {minus}1}. The luminescence properties of Si nanocrystals and porous Si are consistent, in most respects, with simple emission from size-dependent, volume-quantum-confined nanocrystal states. Room-temperature quantum yields increase not because coupling to the radiation field is stronger in confined systems, but because radiationless processes, which dominate bulk Si emission, are significantly weaker in nanocrystalline Si. An analogous series of changes occurs in nanocrystalline AgBr. 42 refs., 8 figs.

P. F. Szajowski

Papers

Quantum confinement in size-selected, surface-oxidized silicon nanocrystals.

Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

Electronic spectroscopy and photophysics of Si nanocrystals. Relationship to bulk c-Si and porous Si