Hydrocarbon films were prepared by electron cyclotron resonance plasma deposition from different hydrocarbon source gases at varying ion energies. The source gases used were the saturated hydrocarbons CH4, C2H6, C3H8, C4H10 (n- and iso-) and the unsaturated hydrocarbons C2H4 and C2H2 as well as mixtures of these gases with hydrogen. Film deposition was analyzed in situ by real-time ellipsometry, and the resulting films ex situ by ion-beam analysis. On the basis of the large range of deposition parameters investigated, the correlation between hydrocarbon source gas, deposition parameters, and film properties was determined. The film properties are found to be influenced over a wide range not only by the energy of the impinging ions, but also by the choice of source gas. This is in contrast to a widely accepted study where no dependence of the film properties on the source gas was observed, this being ascribed to a “lost-memory effect.” A strong correlation was found between the hydrogen content of the films and the film properties. This strong correlation is explained on the basis of the random-covalent-network model.

Plasma chemical vapor deposition of hydrocarbon films: The influence of hydrocarbon source gas on the film properties

Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

Plasma-assisted deposition of thin films is widely used in microelectronic circuit manufacturing. Materials deposited include conductors such as tungsten, copper, aluminum, transition-metal silicides, and refractory metals, semiconductors such as gallium arsenide, epitaxial and polycrystalline silicon, and dielectrics such as silicon oxide, silicon nitride, and silicon oxynitride. This paper reviews plasma-assisted chemical vapor deposition (CVD) applications and techniques for dielectric thin films. In particular, we focus on the integration, process, and reliability requirements for dielectric films used for isolation, passivation, barrier, and antireflectivecoating applications in ultralargescale integrated (ULSI) semiconductor circuits. In addition, manufacturing issues and considerations for further work are discussed.

Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant alternatives. Aspects relevant to the HDP CVD process and using the process to achieve interlevel insulation, gap filling, and planarization are discussed. Results obtained thus far suggest that the process may play an important role in the future fabrication of integrated circuits, provided several metal-contamination and process-integration concerns can be effectively addressed.

High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

The composition dependence of room temperature 1.54 μm Er3+ photoluminescence of erbium-doped silicon:oxygen thin films produced by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with a Si:O ratio of 1:1.2 after a 900 °C anneal and the formation of silicon nanoclusters embedded in the SiO2 matrix. The high active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to the high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

A comparative study of the deposition of diamond-like carbon films using methane or benzene in a microwave electron cyclotron resonance plasma-enhanced chemical vapor deposition system has been performed. Process variables studied were reactor pressure, applied radio frequency substrate bias, and microwave power. The plasma stream was characterized using optical emission spectroscopy and mass spectrometry. Film properties studied included optical energy gap, total hydrogen content, integrated C-H stretch absorption, index of refraction, and Raman spectra. The use of a high C/H ratio reactant such as benzene was found to be advantageous over methane in that higher deposition rates were possible and the resultant films exhibit diamond-like properties without the application of large substrate biases. Another result of this investigation was further confirmation that hard carbon films contain a significant quantity of nonbonded hydrogen [A. Grill and V. Patel, Appl. Phys. Lett. 60 (17), 2089 (1992)].

Comparison of diamond-like carbon film deposition by electron cyclotron resonance with benzene and methane

The limiting epitaxial thickness of Si films grown at a low substrate temperature by plasma enhanced chemical vapor deposition has been determined. The specific process used was electron cyclotron resonance plasma deposition. The limiting epitaxial thickness was found to decrease with the ratio of energetic ion‐to‐adatom arrivals on the substrate surface. The measured epitaxial thicknesses are similar to those obtained in previous investigations using molecular beam epitaxy. Hydrogen surface coverage does not appear to be a factor in limiting epitaxial thickness. The maximum epitaxial thickness remains to be determined for this process and substrate temperature range.

Epitaxial film thickness in the low‐temperature growth of Si(100) by plasma enhanced chemical vapor deposition

Epitaxial Si films have been deposited at low substrate temperatures of 400 and 500 °C, by plasma enhanced chemical vapor deposition using an electron cyclotron resonance source. Samples were analyzed using Rutherford backscatter spectrometry, cross‐sectional transmission electron microscopy, and x‐ray diffraction. The ion‐to‐adatom arrival ratio was found to be an important parameter in determining epitaxial film quality. This ratio was controlled by the SiH4 feed rate, microwave power level, and shape of the magnetic field in the substrate region. Incident ion energy and ion flux were monitored with a gridded energy analyzer located at the substrate location.

Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Epitaxial growth of erbium‐doped silicon films has been performed by plasma‐enhanced chemical vapor deposition using an electron‐cyclotron‐resonance source. The goal was to incorporate erbium as an optically active center (ErO6) through the use of metal‐organic dopant sources. The characteristic 1.5 μm emission was observed by photoluminescence. Chemical analysis of the film revealed, however, that the organic ligands were decomposing and contributing to the carbon contamination of the films. Analysis of the molecular flux to the substrate indicated that the metal‐organic compound used, tris(2,2,6,6‐tetramethyl‐3‐5‐heptanedionato)erbium(III), was most likely to decompose, and supply unbonded atomic erbium and not the optical active species, ErO6. Excessive carbon contamination lowered epitaxial quality and reduced the photoluminescent intensity. Photoluminescent intensity was improved by a 600 °C anneal but was strongly quenched by a 900 °C anneal. The low‐temperature anneal improved crystal quality, and ...

Erbium‐doped silicon films grown by plasma‐enhanced chemical‐vapor deposition

Epitaxial growth of Er‐doped silicon films has been performed by plasma‐enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x‐ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6‐tetramethyl‐ 3,5‐heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis ...

P. S. Andry

Papers

Comparison of diamond-like carbon film deposition by electron cyclotron resonance with benzene and methane

Epitaxial film thickness in the low‐temperature growth of Si(100) by plasma enhanced chemical vapor deposition

Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Erbium‐doped silicon films grown by plasma‐enhanced chemical‐vapor deposition

Growth of Er‐doped silicon using metalorganics by plasma‐enhanced chemical vapor deposition