P. Uma Sathyakam

TL;DR: In this article, the authors presented an accurate modeling hierarchy for mixed CNT bundle interconnects, where single-walled CNTs and multi-wall CNT bundles were modelled as equivalent single conductor transmission lines and then combined to form a mixed-CNT bundle Interconnect, which is basically a multiple-equivalent single conductor model.

TL;DR: This is the first review on MCB VLSI interconnects and the ability to conduct high current at high temperatures through the 1D structure is making the CNT interconnect technology an attractive one.

TL;DR: In this article, a realistic inter-carbon nanotube (CNT) electrostatic coupling capacitance and tunnelling conductance model for a mixed CNT bundle is presented.

TL;DR: In this paper, the authors proposed a new method to reduce crosstalk of carbon nanotube (CNT)-based VLSI interconnects by proper integration of semiconducting CNTs (s-CNTs) and a new contact geometry.

TL;DR: In this article, a review of low-k dielectric materials for CNT interconnects is presented and the specific properties of these materials and the necessities for integrating them into CNT-interconnects to meet the requirements of future IC designers.