Journal ArticleDOI
Role of Semiconducting Carbon Nanotubes in Crosstalk Reduction of CNT Interconnects
TLDR
In this paper, the authors proposed a new method to reduce crosstalk of carbon nanotube (CNT)-based VLSI interconnects by proper integration of semiconducting CNTs (s-CNTs) and a new contact geometry.Abstract:
In this letter, we present a new method to reduce crosstalk of carbon nanotube (CNT)-based VLSI interconnects. For this, proper integration of semiconducting CNTs (s-CNTs) and a new contact geometry, where metallic CNTs are in the core and s-CNTs are in the periphery of the CNT bundle, is proposed. The coupling capacitance between adjacent interconnects is modeled and compared with and without s-CNTs in the CNT bundle periphery. SPICE analysis and EM simulations are carried out which show that the coupling capacitance can be reduced by 82.5% and the resulting delay by 8.41%. We suggest that the crosstalk effect between neighboring wires can be reduced by using s-CNTs in the design.read more
Citations
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Journal ArticleDOI
Analysis of Delay and Dynamic Crosstalk in Bundled Carbon Nanotube Interconnects
TL;DR: In this paper, different MCBs with random and spatial arrangements are proposed based on the placements of single and multiwalled carbon nanotubes (SWNTs and MWNTs) in a bundle.
Journal ArticleDOI
Active Shielding of MWCNT Bundle Interconnects: An Efficient Approach to Cancellation of Crosstalk-Induced Functional Failures in Ternary Logic
TL;DR: In this article, an efficient active shielding of multi-walled carbon nanotube (MWCNT) bundle interconnects is proposed to cancel the crosstalk-induced functional failures in ternary logic.
Journal ArticleDOI
Modeling of Carbon Nanotube-Based Differential Through-Silicon Vias in 3-D ICs
TL;DR: In this article, a novel differential through-silicon via (D-TSV) structure is proposed, which is filled with vertically aligned carbon nanotube (VACNT) array and two metal pads are deposited on the sides of the surface of the proposed TSSV to form differential signal transmission paths.
Journal ArticleDOI
Future Dielectric Materials for CNT Interconnects - Possibilities and Challenges
TL;DR: In this article, a review of low-k dielectric materials for CNT interconnects is presented and the specific properties of these materials and the necessities for integrating them into CNT-interconnects to meet the requirements of future IC designers.
Journal ArticleDOI
Optimization Techniques for CNT Based VLSI Interconnects — A Review
TL;DR: This paper presents a detailed discussion on the techniques and approaches of past, present and future relevant for interconnects of VLSI circuits.
References
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Journal ArticleDOI
Static polarizabilities of single-wall carbon nanotubes
Lorin X. Benedict,Lorin X. Benedict,Steven G. Louie,Steven G. Louie,Marvin L. Cohen,Marvin L. Cohen +5 more
TL;DR: The static electric polarizability tensor of single-wall carbon nanotubes is calculated within the random-phase approximation using a simple tight-binding model and a classical correction to include local fields to suggest that under the application of a randomly oriented electric field, nanot tubes acquire dipole moments pointing mainly along their axes.
Journal ArticleDOI
On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects
TL;DR: In this article, the applicability of single-walled carbon nanotubes (SWCNTs) as interconnects in nanoscale integrated circuits has been investigated and a detailed analysis of SWCNT interconnect resistance is presented.
Proceedings ArticleDOI
Novel approach to fabricating carbon nanotube via interconnects using size-controlled catalyst nanoparticles
Shintaro Sato,Mizuhisa Nihei,A. Mimura,Akio Kawabata,Daiyu Kondo,Hiroki Shioya,Taisuke Iwai,M. Mishima,Mari Ohfuti,Yuji Awano +9 more
TL;DR: In this article, a new approach to fabricating carbon nanotube (CNT) vias, which uses preformed catalyst nanoparticles to grow CNTs, was proposed, and a new deposition system injected them into via holes down to 40 nm in diameter.
Journal ArticleDOI
Cu Interconnect Limitations and Opportunities for SWNT Interconnects at the End of the Roadmap
Ahmet Ceyhan,Azad Naeemi +1 more
TL;DR: Contrary to the previous publications, which have indicated that individual single-wall carbon nanotube (SWNT) interconnects are too resistive for high-performance CMOS applications and must be used in bundles, this paper demonstrates that they can offer significant delay and energy-per-bit improvements in high- performance circuits at the end of the roadmap.
Journal ArticleDOI
Switching behavior of semiconducting carbon nanotubes under an external electric field
TL;DR: In this article, the authors investigated the switching characteristics of carbon nanotubes connected to gold electrodes under an external (gate) electric field and found that the external introduction of holes is necessary to account for the experimental observations.