Pamela Jurczak

TL;DR: In this article, the authors review the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance, and propose a monolithic and heterogeneous integration of IIIV semiconductor components on Si platforms.

TL;DR: In this article, the defect filter layers (DFLs) were introduced to reduce threading dislocations at the interface between III-V and Si, which led to device degradation.

TL;DR: The influences of droplet size on the growth of self-catalyzed ternary nanowires (NWs) were studied using GaAsP NWs and thinner NWs were observed to be richer in P, indicating that P is more resistant to the GT effect than As because of a higher chemical potential inside Ga droplets.

TL;DR: Be atoms are found for the first time to be incorporated into NWs predominantly through the Ga droplet that is observed to be beneficial for setting up thermodynamic equilibrium at the growth front and causing the growth of phase-pure zincblende NWs.

TL;DR: Shells with pure zinc-blende crystal quality and highly regular morphology are successfully grown on the defect-free NW cores and demonstrated an enhancement of one order of magnitude for room-temperature emission compared to that of the defective shells.