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Paul A. Basore

Researcher at National Renewable Energy Laboratory

Publications -  59
Citations -  3152

Paul A. Basore is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Silicon & Photovoltaic system. The author has an hindex of 26, co-authored 56 publications receiving 2977 citations. Previous affiliations of Paul A. Basore include University of New South Wales & Sandia National Laboratories.

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Proceedings ArticleDOI

PC1D version 5: 32-bit solar cell modeling on personal computers

TL;DR: A new version of the computer program PC1D is described which takes advantage of the latest graphical environments of personal computers to offer improved visualization of cell design and operation, simpler comparison of experimental data with simulation results, greatly increased calculation speed, and improved models for generation and recombination effects.
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Numerical modeling of textured silicon solar cells using PC-1D

TL;DR: PC-PC-1D as discussed by the authors is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers, which offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients.
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Crystalline silicon on glass (CSG) thin-film solar cell modules

TL;DR: In this article, the authors proposed a thin-film technology for large-scale photovoltaic applications, which combines the advantages of standard silicon wafer-based technology, namely ruggedness, durability, good electronic properties and environmental soundness, with the advantage of thin-films, specifically low material use, large monolithic construction and a desirable glass superstrate configuration.
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Extended spectral analysis of internal quantum efficiency

TL;DR: In this paper, a method for identifying performance-limiting mechanisms in silicon solar cells has been developed and tested at Sandia, which uses the internal quantum efficiency (IQE) of the device at both near-infrared and near-bandgap wavelengths.
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Surface recombination velocity of highly doped n-type silicon

TL;DR: In this article, the minority-carrier surface recombination velocity of n-type silicon, Sp, was analyzed using photoconductance decay measurements of the recombination currents corresponding to different phosphorus diffusions, including oxide-, unpassivated, and metal-coated surfaces.