P
Paul G. Kotula
Researcher at Sandia National Laboratories
Publications - 263
Citations - 6647
Paul G. Kotula is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Thin film & Transmission electron microscopy. The author has an hindex of 41, co-authored 251 publications receiving 5861 citations. Previous affiliations of Paul G. Kotula include University of Minnesota & Rice University.
Papers
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Journal ArticleDOI
The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films
Jerrold A. Floro,Sean J. Hearne,John A. Hunter,Paul G. Kotula,Eric Chason,Steven C. Seel,Carl V. Thompson +6 more
TL;DR: In this article, real-time measurements of stress evolution during the deposition of Volmer-Weber thin films reveal a complex interplay between mechanisms for stress generation and stress relaxation.
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Growth and sintering of fullerene nanotubes.
Daniel T. Colbert,Jinshui Zhang,S. M. McClure,Pavel Nikolaev,Z. Chen,Jason H. Hafner,D. W. Owens,Paul G. Kotula,C. B. Carter,J. H. Weaver,Andrew G. Rinzler,Richard E. Smalley +11 more
TL;DR: A detailed mechanism that features the high electric field at (and field-emission from) open nanotube tips exposed to the arc plasma, and consequent positive feedback effects from the neutral gas and plasma, is proposed for tube growth in such arcs.
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Automated analysis of SEM X-ray spectral images: a powerful new microanalysis tool.
TL;DR: The application of a new automated, unbiased, multivariate statistical analysis technique to very large X-ray spectral image data sets, based in part on principal components analysis, returns physically accurate component spectra and images in a few minutes on a standard personal computer.
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Accounting for Poisson noise in the multivariate analysis of ToF‐SIMS spectrum images
Michael R. Keenan,Paul G. Kotula +1 more
TL;DR: This paper will present a simple method for weighting the data to account for Poisson noise and it will be demonstrated that PCA, when applied to the weighted data, leads to results that are more interpretable, provide greater noise rejection and are more robust than standard PCA.
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High-speed and low-energy nitride memristors
Byung Joon Choi,Byung Joon Choi,Antonio C. Torrezan,John Paul Strachan,Paul G. Kotula,Andrew J. Lohn,Matthew J. Marinella,Zhiyong Li,R. Stanley Williams,Jianhua Yang,Jianhua Yang +10 more
TL;DR: In this article, the formation of an Al-rich conduction channel through the AlN layer is revealed, and the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.