Paul van der Heide

TL;DR: In this paper, the authors present an in-depth study focused on finding useable conditions for accurate stoichiometric analysis of GaN and AlGaN using atom probe tomography.

TL;DR: This work performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface, and demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferro electric response.

TL;DR: Although a significant range of conditions for accurate GaN stoichiometric analysis were readily achieved, a more limited range of analysis conditions that yielded an accurate Al site fraction for AlGaN was observed because the Al was typically overestimated.

TL;DR: In this paper, the authors proposed an area-selective atomic layer deposition (ALD) method to create nm-scale features through self-assembly of a blocking layer and ALD growth on the areas not covered with the blocking layer.

TL;DR: The result of integrating a SPM module into a ToF-SIMS system is presented illustrating the provements in 3D data accuracy which can be obtained when analyzing complex 3D-systems.