Luca Di Piazza

TL;DR: In this paper, the endurance, imprint, and retention tests are carried out on FE aluminum-doped hafnium oxide thin films with different electrodes: 1) metal-insulator-metal (MIM) and 2) silicon-inulator-silicon (SIS).

TL;DR: The flexoelectric effect in Al-doped hafnium oxide is shown, using the tip of an atomic force microscope (AFM) to maximize the strain gradient at the nanometre scale and indicates that pure mechanical force can be used for the local polarization control of sub-100 nm domains.

TL;DR: This work performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface, and demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferro electric response.

TL;DR: The CD SEM (Critical Dimension Scanning Electron Microscope) is one of the main tools used to estimate Critical Dimension (CD) in semiconductor manufacturing nowadays, but, as all metrology tools, it will face considerable challenges to keep up with the requirements of the future technology nodes as discussed by the authors.

TL;DR: In this article, the crystallographic origins of the wake-up in doped hafnia ferroelectric devices are clarified with three main mechanisms: strain relaxation in the orthorhombic phase led to an adjustment of the unit cell volume toward a "bulk-like" value.