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Wilfried Vandervorst
Researcher at Katholieke Universiteit Leuven
Publications - 698
Citations - 12296
Wilfried Vandervorst is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Spreading resistance profiling & Silicon. The author has an hindex of 50, co-authored 690 publications receiving 11281 citations. Previous affiliations of Wilfried Vandervorst include Analysis Group & IMEC.
Papers
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Journal ArticleDOI
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.
Umberto Celano,Ludovic Goux,Attilio Belmonte,Karl Opsomer,Alexis Franquet,Andreas Schulze,Christophe Detavernier,Christophe Detavernier,Olivier Richard,Hugo Bender,Malgorzata Jurczak,Wilfried Vandervorst +11 more
TL;DR: This Letter reports for the first time on the three-dimensional (3D) observation of the shape of the conductive filament and concludes that the dynamic filament-growth is limited by the cation transport.
Journal ArticleDOI
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
Martin A. Green,M.-Y. Ho,B. W. Busch,Glen D. Wilk,T.W. Sorsch,Thierry Conard,Bert Brijs,Wilfried Vandervorst,Petri Räisänen,David A. Muller,M. Bude,J.L. Grazul +11 more
TL;DR: In this article, a study was conducted to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films, and the results showed that the use of a chemical oxide underlayer results in almost no barrier to film nucleation, enabling linear and predictable growth at constant film density.
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Island growth as a growth mode in atomic layer deposition: A phenomenological model
TL;DR: In this paper, a division of ALD processes to four classes is proposed, on the basis of how the growth-per-cycle varies with the number of reaction cycles: linear growth, substrateenhanced growth, and substrate-inhibited growth of type 1 and type 2.
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High-k dielectrics for future generation memory devices (Invited Paper)
Jorge A. Kittl,Karl Opsomer,Mihaela Popovici,Nicolas Menou,Ben Kaczer,X.P. Wang,Christoph Adelmann,M. A. Pawlak,K. Tomida,Aude Rothschild,Bogdan Govoreanu,Robin Degraeve,Marc Schaekers,Mohammed Zahid,Annelies Delabie,Johan Meersschaut,Wouter Polspoel,Sergiu Clima,Geoffrey Pourtois,Werner Knaepen,Christophe Detavernier,Valery V. Afanas'ev,Tom E. Blomberg,Dieter Pierreux,J. Swerts,P. Fischer,J. W. Maes,D. Manger,Wilfried Vandervorst,Thierry Conard,Alexis Franquet,Paola Favia,Hugo Bender,Bert Brijs,S. Van Elshocht,Malgorzata Jurczak,J. Van Houdt,Dirk Wouters +37 more
TL;DR: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and dynamic random access memory (DRAM) devices are reviewed in this article.
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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
Umberto Celano,Ludovic Goux,Robin Degraeve,Andrea Fantini,Olivier Richard,Hugo Bender,Malgorzata Jurczak,Wilfried Vandervorst +7 more
TL;DR: A tomography technique is developed which combines the high spatial resolution of scanning probe microscopy with subnanometer precision in material removal, leading to a true 3D-probing metrology concept and locate and characterize in three-dimensions the nanometric volume of the conductive filament in state-of-the-art bipolar oxide-based devices.