Claudia Fleischmann

TL;DR: The application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source shows high sensitivity for spectroscopic material discrimination.

TL;DR: In this article, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400cm2/eV-s and 1300cm2 /eVs.

TL;DR: Reference-free Grazing Incidence X-ray Fluorescence (GIXRF) based on synchrotron radiation can significantly contribute to the characterization of such nanolayered systems as mentioned in this paper.

TL;DR: In this article, the authors evaluate the performance of 3D metrology tools and concepts for 3D devices and structures, and assess not only the ability to achieve 3D spatial resolution, but also the physical property which is probed, i.e., dopants versus carriers, as well as the complexity of the method used because this impacts on success rate, turn-around time, throughput, automation etc.

TL;DR: The current state of the art of nanoelectronic device analysis by atom probe is addressed and the challenges in device analysis in the next ten years are laid out in this paper, where the improvements necessary in sample preparation, instrumentation and reconstruction procedures are discussed.