Peihua Wangyang

TL;DR: This work provides a guide for exploration of perovskite materials in next-generation optoelectronics, such as photoelectric detectors or photocatalyst, and demonstrates increased photocurrent generation in response to visible light and X-ray illumination.

TL;DR: This study fabricated all-inorganic perovskite films as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application and demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics.

TL;DR: In this article, the authors reported the successful fabrication of ultrathin PbI2 single crystal by mechanical exfoliation method after the realization of graphene and the properties of samples were investigated by X-ray diffraction, atomic force microscopy and Raman scattering.

TL;DR: In this paper, all-inorganic perovskite CsPbBr 3 films composed of uniform nanocubes were prepared by two-step method and corresponding photoelectric detection devices were further designed for studying the photoresponse property.