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Phan Trong Tue

Researcher at Tokyo Institute of Technology

Publications -  41
Citations -  429

Phan Trong Tue is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Thin-film transistor & Oxide. The author has an hindex of 10, co-authored 41 publications receiving 377 citations. Previous affiliations of Phan Trong Tue include Japan Advanced Institute of Science and Technology.

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High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

TL;DR: In this paper, the effect of adding Zr to In-Zn-O, particularly the electrical characteristics of their thin films and TFTs, were systematically investigated, and it was shown that the Zr effectively controlled the oxygen vacancies because of its low standard electrode potential, which was confirmed by modifications in the optical bandgap energy, carrier concentration and oxygen-vacancy density of the ZIZO thin films.
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Rheology printing for metal-oxide patterns and devices

TL;DR: In this article, a new printing method was proposed and the printing of metal-oxide patterns with well-defined shapes was demonstrated, which is closely related to the cluster structure in the precursor gel, and the imprinted pattern shows very small shrinkage during post-annealing, thereby achieving a high shape fidelity to the mould.
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Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors

TL;DR: This work presents the first demonstration of the successful integration of a novel peptide aptamer with a liquid-gated SWCNT FET to achieve highly sensitive and specific detection of Cathepsin E (CatE), a useful prognostic biomarker for cancer diagnosis.
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Totally solution-processed ferroelectric-gate thin-film transistor

TL;DR: In this paper, the authors have fabricated inorganic ferroelectric-gate thin film transistors using only a chemical solution deposition (CSD) process, which exhibited typical n-channel transistor operation with good saturation in drain current and drain voltage (ID-VD) characteristics.
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A low-temperature crystallization path for device-quality ferroelectric films

TL;DR: In this paper, a path for low-temperature crystallization of device-quality solution-processed lead zirconate titanate films is presented. But the path is not straightforward.