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Philipp Gegenwart

Researcher at University of Augsburg

Publications -  362
Citations -  14781

Philipp Gegenwart is an academic researcher from University of Augsburg. The author has contributed to research in topics: Quantum critical point & Antiferromagnetism. The author has an hindex of 55, co-authored 338 publications receiving 12885 citations. Previous affiliations of Philipp Gegenwart include University of Göttingen & Augsburg College.

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Quantum disordered ground state in the spin-orbit coupled Jeff = 1/2 distorted honeycomb magnet BiYbGeO5

TL;DR: In this paper , the authors delineate quantum magnetism in strongly spin-orbit coupled, distorted honeycomb-lattice antiferromagnet BiYbGeO${5} , and show that its low-temperature behavior is well described by an effective $J_{\rm eff}=1/2$ Kramers doublet.
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Tuning low-energy scales in YbRh 2 Si 2 by non-isoelectronic substitution and pressure

TL;DR: In this paper, the effect of charge carrier doping on quantum criticality in the heavy-fermion metal YbRh2Si2 was studied and it was shown that the data are incompatible with the presumed Kondo breakdown and instead point at a Zeeman driven magnetic polarization underlying critical temperature.

Deformation of the triangular spin-$\frac{1}{2}$ lattice in Na$_2$SrCo(PO$_4$)$_2$

TL;DR: In this article , the crystal structure and thermodynamic properties of Na 2 SrCo(PO 4 ) 2 , the chemical sibling of the triangular quantum spin-liquid candidate Na 2 BaCo (PO 4 ), are reported.
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Specific heat and disorder in the mixed state of non-magnetic borocarbides

TL;DR: In this paper, the gamma(H)T data point to a quasi-clean limit for (Y,Lu)-substitutions and to a transition to the quasi-dirty limit for Ni,Pt-substitution.
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Magnetotransport of the low-carrier density one-dimensional S=1/2 antiferromagnet Yb4As3

TL;DR: In this paper, the transport properties of the semimetallic quasi-one-dimensional S = 1/2 antiferromagnet Yb4As3 have been studied by performing low-temperature (T≥0.02 K) and high magneticfield (B≤60 T) measurements of the electrical resistivity ρ(T, B).