P
Pierre Ferret
Researcher at Commissariat à l'énergie atomique et aux énergies alternatives
Publications - 93
Citations - 1799
Pierre Ferret is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Nanowire & Epitaxy. The author has an hindex of 23, co-authored 91 publications receiving 1671 citations. Previous affiliations of Pierre Ferret include University of Grenoble & French Alternative Energies and Atomic Energy Commission.
Papers
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Journal ArticleDOI
Size effects in mechanical deformation and fracture of cantilevered silicon nanowires.
TL;DR: Results indicate that vapor-liquid-solid grown wires are relatively free of extended volume defects and that fracture strength is likely controlled by twinning and interfacial effects at the wire foot.
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Control of gold surface diffusion on Si nanowires
Martien Den Hertog,Jean-Luc Rouvière,F. Dhalluin,Pierre J. Desré,Pascal Gentile,Pierre Ferret,Fabrice Oehler,Thiery Baron +7 more
TL;DR: It is found that the gold surface diffusion can be controlled by two growth parameters, the silane partial pressure and the growth temperature, and that the wire diameter also affects gold diffusion.
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Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A. Even,G. Laval,Olivier Ledoux,Pierre Ferret,David Sotta,Eric Guiot,Francois Levy,Ivan-Christophe Robin,Amelie Dussaigne +8 more
TL;DR: In this paper, the impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full GaN heterostructure was investigated, and the effect of photoluminescence (PL) emission redshift was observed on InyGa1-yN buffer layers and also on InxGa 1-xN/InyGa 1yN multiple quantum wells (MQWs).
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Direct imaging of p-n junction in core-shell GaN wires.
Pierre Tchoulfian,Fabrice Donatini,Fabrice Donatini,Francois Levy,Amelie Dussaigne,Pierre Ferret,Julien Pernot,Julien Pernot,Julien Pernot +8 more
TL;DR: In this paper, electron beam induced current (EBIC) and secondary electron voltage constrast (VC) measurements were demonstrated to delineate the radial and axial junction existing in the 3D structure.
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Silicon nanowires: Diameter dependence of growth rate and delay in growth
TL;DR: In this paper, a semi-empirical model combining Gibbs-Thomson effect and incubation time was proposed to estimate the length of Si nanowires with diameter under 100 nm.