Introduction to Electromagnetic Compatibility

Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.

A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices

https://iopscience.iop.org/article/10.1088/2515-7647/ab77a2/pdf

Silicon carbide color centers for quantum applications

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of applications which were previously dominated by silicon-based IGBTs From the perspective of a power converter design, the development of MV SiC devices eliminates the need for series connected architectures, control of multilevel converter topologies which are necessary for MV applications, and the inherent reliability issues associated with it However, when SiC devices are used in these applications, they are exposed to a high peak stress (5–10 kV) and a very high $dv/dt$ (10–100 kV/ $\mu$ s) Using these devices calls for a gate driver with a dc–dc isolation stage that has ultralow coupling capacitance in addition to be able to withstand the high isolation voltage This paper presents a new MV gate driver design to address these issues while maintaining a minimal footprint for the gate driver An MV isolation transformer is designed with a low interwinding capacitance, while maintaining the clearance, creepage, as well as insulation standards A dc isolation test has been performed to validate the integrity of the insulating material The key features include low input common mode current, and a short-circuit protection scheme specifically designed for 10 kV SiC mosfet s The performance of the gate driver is evaluated using double pulse tests and continuous tests Experimental results validate the advantages of the gate driver and its application for MV SiC devices exhibiting very high $dv/dt$  The proposed gate driver concept is aimed at providing an efficient and reliable method to drive MV SiC devices

Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$

-Base sur les contraintes de fonctionnement des transistors a commutations rapides, cet article presente et analyse la problematique du transfert des ordres de commande du transistor « high-side » dans une configuration de bras d’onduleur. En plus des contraintes imposees par les forts « dv/dt » sur le driver, la temperature de fonctionnement elevee (jusqu’a 200°C) impose une conception specifique du circuit de commande. Aujourd’hui, la technologie silicium reste la solution la plus fiable et la plus mature pour la conception du driver mais au prix d’une mise en oeuvre delicate (tenue en tension, temperature, dv/dt). Trois solutions sont proposees et comparees : transformateur coreless, level-shifter et emetteur/recepteur optique. Les delais de propagation, l’integrite du signal (duree du rapport cyclique et precision temporelle) ainsi que l’immunite auxdv/dt des prototypes sont caracterisees en fonction de la temperature ambiante de fonctionnement.

Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutation

Diamond Schottky diodes have been realized worldwide showing high figures of merit [1], [2]. The self-heating phenomenon on the Schottky barrier diodes has been highly investigated during the characterization process [3]. The Boron doped CVD has been widely used for these Schottky diodes, offering the best performances in specific ON resistance (Ron) vs Breakdown Voltage figure of merit. Due to the incomplete ionization of Boron dopants at room temperature, the self-heating effect can be used to decrease the diamond semiconductor forward losses. Moreover, a particular attention needs to be done on the parallelization of diamond Schottky diodes due to a negative temperature coefficient (from 0K to 400-600K) and a positive one (above 400-600K depending on the doping level), an accurate temperature management system is then required.
We propose here a monolithic integration of a small area Schottky barrier diode used as a wide range temperature sensor. The diode voltage drop is used as a thermosensitive parameter at a constant forward bias current. The linear variation of this voltage drop on a temperature range, from room temperature to 440K, at a constant bias current density of 2.5A/cm² allows a sensor sensitivity of 1.5mV/K. It is also demonstrated that this integrated temperature sensor is affected by the biasing conditions of the main Schottky diode, which is monolithically integrated as it is shown on Figure 2. The temperature measurement has to be done with the main diode in OFF state to have an accurate temperature information. A modified integrated structure is introduced in this work to prevent this limitation. This integrated temperature measurement allows an accurate junction temperature monitoring, offering reliable device paralleling opportunities and accurate self-heating monitoring.

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Dans cet article une structure ‘‘3D'' a base de composant GaN est presentee. Sa realisation proche des structures ‘‘3D'' existantes pour les composants Silicium tel que le concept PCoC donne la perspective de beneficier des memes avantages vis a vis des perturbations electromagnetiques en mode conduit. C'est ce qui est verifie dans cet article en comparant la structure ‘‘3D'' avec une realisation d'une structure ‘‘2D''optimisee pour composant GaN.

https://hal.archives-ouvertes.fr/hal-01361586/document

Perturbations électromagnétiques conduites d'un bras d'onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontaux

Cet article presente les avancees sur la simulation analytique et numerique de composants de puissance en diamant, ainsi que les problematiques de caracterisation associees. Les modeles specifiques au diamant ont ete implementes et ont ete calibres en confrontant les resultats de simulation aux dernieres donnees experimentales existantes. Enfin, un soin particulier a ete apporte sur la maitrise de l'auto-echauffement et de la calibration de la temperature du composant diamant sous test.

https://hal.archives-ouvertes.fr/hal-01361596/document

Pierre Lefranc

Papers

Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutation

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Perturbations électromagnétiques conduites d'un bras d'onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontaux

Simulation numérique et caractérisation de composants de puissance en diamant