The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Slow light with a remarkably low group velocity is a promising solution for buffering and time-domain processing of optical signals. It also offers the possibility for spatial compression of optical energy and the enhancement of linear and nonlinear optical effects. Photonic-crystal devices are especially attractive for generating slow light, as they are compatible with on-chip integration and room-temperature operation, and can offer wide-bandwidth and dispersion-free propagation. Here the background theory, recent experimental demonstrations and progress towards tunable slow-light structures based on photonic-band engineering are reviewed. Practical issues related to real devices and their applications are also discussed. The unique properties of wide-bandwidth and dispersion-free propagation in photonic-crystal devices have made them a good candidate for slow-light generation. This article gives the background theory of slow light, as well as an overview of recent experimental demonstrations based on photonic-band engineering.

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Slow light in photonic crystals

The invention provides a microfabrication process which may be used to manufacture a MEMS device. The process comprises depositing one or a stack of layers on a base layer, said one layer or an uppermost layer in said stack of layers being a sacrificial layer; patterning said one or a stack of layers to provide at least one aperture therethrough through which said base layer is exposed; depositing a photosensitive layer over said one or a stack of layers; and passing light through said at least one aperture to expose said photosensitive layer.

A method for fabricating a structure for a microelectromechanical systems (mems) device

Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to ...

Ga2O3 films for electronic and optoelectronic applications

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration.

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III-V/Si hybrid photonic devices by direct fusion bonding

The authors report, for the first time, a highly selective and widely tunable optical filter at 1.55 /spl mu/m using a Fabry-Perot resonator with micromachined InP/air-gap distributed Bragg reflectors. The minimum resonance full-width at half-maximum (FWHM), as measured by microreflectivity experiments, is close to 0.4 mm (around 1.55 /spl mu/m) and is compatible with wavelength-division multiplexing specifications of optical telecommunications. The tuning range is 62 nm for a tuning voltage of 14 V. The FWHM is kept below 1 nm over a 40 nm tuning range.

Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications

Single-line photonic-crystal waveguides are investigated. Photoluminescence experiments and three-dimensional calculation are performed and allow a clear identification of the guided modes. The propagation properties of the latter (group velocity, losses) are extracted from photoluminescence spectra obtained on closed waveguides which act as linear cavities.

Group velocity and propagation losses measurement in a single-line photonic-crystal waveguide on InP membranes

Defectless two-dimensional photonic crystal structures have been fabricated by drilling holes in a thin multi-quantum-well InP-based heterostructure transferred onto a silicon host wafer. Extremely low group velocity modes, which correspond to the predicted photonic valence band edge, have been observed for different filling factors. Under pulsed optical pumping, room temperature laser operation around 1.5 μm has been achieved on these structures with a threshold in the milliwatt range.

InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

We report experimental demonstration of very fast nonlinear response around 1.5μm in an InP-based two-dimensional photonic crystal. The nonlinearity produced by low pump powers via carrier induced nonlinear refractive index, leads to an efficient wavelength shift of a photonic crystal resonance observed in reflectivity. Thus we show that it is possible to obtain round the clock (rise and recovery) switching times shorter than 10ps with contrast ratio higher than 80%.

Ultrafast dynamics of the third-order nonlinear response in a two-dimensional InP-based photonic crystal

We demonstrate experimentally all-optical bistable operation in an InP-based two-dimensional photonic crystal slab lying on top of a Bragg reflector. Bistability is obtained around 1550nm, using a low group velocity mode at the band edge of the photonic dispersion characteristic. The origin of the bistable regime is shown to be the fast (275ps relaxation time), electronically induced nonlinear refraction index. A low intensity threshold of 4kW∕cm2 was observed, with a contrast of 65% between the high and low reflectivity states.

Pierre Viktorovitch

Papers

Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications

Group velocity and propagation losses measurement in a single-line photonic-crystal waveguide on InP membranes

InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

Ultrafast dynamics of the third-order nonlinear response in a two-dimensional InP-based photonic crystal

All-optical bistable band-edge Bloch modes in a two-dimensional photonic crystal