Bernard Aspar

TL;DR: The Smart-Cut process as discussed by the authors involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer.

TL;DR: In this article, the authors proposed a method for transferring at least a thin film of solid material delimited in an initial substrate comprising the following steps: a step for forming a layer of inclusions (21) in the initial substrate (20), at a depth corresponding to the thickness required for the thin film, said inclusions being provided to constitute traps for the gas species to be subsequently implanted; a subsequent step for implanting said gas species so as to bring the gas mass into the layer of the inclusions, the dose of implanted gas species implanted being sufficient to bring about

TL;DR: In this article, defectless two-dimensional photonic crystal structures have been fabricated by drilling holes in a thin multi-quantum-well InP-based heterostructure transferred onto a silicon host wafer.

TL;DR: In this paper, the authors proposed a method for making a thin film from a solid material substrate having a planar surface, which consists in implanting gaseous species in the substrate to form a layer of microcavities located at a depth relative to the planar surfaces corresponding to the desired thickness for the film.

TL;DR: In this article, the authors reported room temperature pulsed laser operation of 2D photonic crystal microcavities around 1.55 /spl mu/m. Such devices are based on thin III/V heterostructures transferred onto silicon and include an InGaAs/InP multiquantum well (MQW) active layer.