Po-Cheng Chou

TL;DR: In this article, an interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated, which shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively.

TL;DR: In this paper, a Pt/AlGaN heterostructure field effect transistor (HFET)-based sensor for detecting ammonia gas is presented. And the related ammonia-sensing mechanisms, including direct dissociation of ammonia gas and triple point model, are presented.

TL;DR: In this paper, an ammonia sensor based on a Pt/AlGaN/GaN Schottky diode, fabricated by the electroless plating (EP) technique, has been studied.

TL;DR: ZnO-nanorod-based resistor-type ammonia gas sensors with underlying Pt/Cr interdigitated electrodes have been fabricated and investigated in this article, where the response is improved by reducing the electrode spacing d. This device possesses response and recovery times of <; 3 min even at low ammonia concentrations (10 ppm).

TL;DR: In this paper, a GaN-based Schottky diode-type sensor with a GaOx layer was studied and demonstrated, where a thin Gaox layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature.