Journal ArticleDOI
Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment
Chun-Chia Chen,Huey-Ing Chen,I-Ping Liu,Hao-Yeh Liu,Po-Cheng Chou,Jian-Kai Liou,Wen-Chau Liu +6 more
TLDR
In this paper, a GaN-based Schottky diode-type sensor with a GaOx layer was studied and demonstrated, where a thin Gaox layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature.Abstract:
In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 × 105 and a large Schottky barrier height variation ratio of 33.1% are found upon exposure to a 1% H2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1% H2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated.read more
Citations
More filters
Journal ArticleDOI
H2, H2S gas sensing properties of rGO/GaN nanorods at room temperature: Effect of UV illumination
Maddaka Reddeppa,Byung-Guon Park,Moon-Deock Kim,Koteswara Rao Peta,Nguyen Duc Chinh,Dojin Kim,Song-Gang Kim,G. Murali +7 more
TL;DR: In this paper, reduced graphene oxide (rGO)/GaN nanorods (NRs) hybrid structure based sensors for hydrogen (H2) and hydrogen sulfide (H 2S) gases has been demonstrated at room temperature.
Journal ArticleDOI
DNA-CTMA functionalized GaN surfaces for NO2 gas sensor at room temperature under UV illumination
Maddaka Reddeppa,Sekhar Babu Mitta,Byung-Guon Park,Song-Gang Kim,Sung Ha Park,Moon-Deock Kim +5 more
TL;DR: A riveting combination of DNA'CTMA/GaN (DGaN) hybrid structure for high-sensitive NO2 gas sensor at room temperature (RT∼28°C) has drawn much interest in recent days.
Journal ArticleDOI
Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer
TL;DR: In this paper, the authors demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water.
Journal ArticleDOI
A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p-i-n GaN nanorods.
Maddaka Reddeppa,Byung-Guon Park,Nguyen Duc Chinh,Dojin Kim,Jae Eung Oh,Tae Geun Kim,Moon-Deock Kim +6 more
TL;DR: A chemical resistor-type NO gas sensor based on p-i-n GaN nanorods (NRs) consisting of InGaN/GaN multi-quantum wells (MQW) is demonstrated and is demonstrated to be a promising material for the detection of NO gas.
Journal ArticleDOI
Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode
TL;DR: An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated in this paper.
References
More filters
Journal ArticleDOI
Thermionic Emission, Field Emission, and the Transition Region
E. L. Murphy,R. H. Good +1 more
TL;DR: In this paper, a general expression for the emitted current as a function of field, temperature, and work function is set up in the form of a definite integral, and each type of emission is associated with a technique for approximating the integral and with a characteristic dependence on the three parameters.
Journal ArticleDOI
Environmental and sustainability aspects of hydrogen and fuel cell systems
TL;DR: In this paper, current and future perspectives of hydrogen and fuel cell systems based on exergetic, life cycle assessment (LCA), and sustainability aspects development are considered for better environment and sustainable development.
Journal ArticleDOI
Hydrogen response mechanism of Pt-GaN Schottky diodes
J. Schalwig,Gerhard Müller,U. Karrer,Martin Eickhoff,Oliver Ambacher,Martin Stutzmann,L. Görgens,Günther Dollinger +7 more
TL;DR: In this article, a GaN-based Schottky diodes with catalytically active platinum electrodes was used to detect hydrogen in high-temperature gas sensor devices and the results indicated an interfacial effect as the origin of the sensor response to hydrogen.
Book ChapterDOI
High H2 sensing performance of anodically oxidized TiO2 film contacted with Pd
TL;DR: In this article, the Schottky barrier at the interface between Pd and TiO2 is assumed to play an important role in the H2 sensing properties, and H atoms formed by dissociative adsorption of H2 at the Pd surface are assumed to be formed by the change in the height of the barrier.
Journal ArticleDOI
Room temperature hydrogen and hydrocarbon sensors based on single nanowires of metal oxides
TL;DR: In this paper, the WO2.72 nanowire with a diameter of 40 nm was found to have better sensing characteristics than a nanowires of 16 nm diameter, and it was also found to be good at detecting aliphatic hydrocarbons in the form of liquefied petroleum gas.